Keywords
Analysis
Chine
Racine
Analysis
Chine
Repository
Accueil
Racine
Racine

Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Keywords » - entrée « Ohmic contacts »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
Ohmic contact < Ohmic contacts < Oils  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 22.
[0-20] [0 - 20][0 - 22][20-21][20-40]
Ident.Authors (with country if any)Title
000124 (2013) Quantized Conductance and Its Correlation to the Supercurrent in a Nanowire Connected to Superconductors
000271 (2013) Efficient quantum dot light-emitting diodes with solution-processable molybdenum oxide as the anode buffer layer
000510 (2012) High-Efficiency Ferroelectric-Film Solar Cells with an n-type Cu2O Cathode Buffer Layer
000513 (2012) High Critical-Current Superconductor-InAs Nanowire-Superconductor Junctions
000649 (2011) Well-aligned ZnO nanorod arrays from diameter-controlled growth and their application in inverted polymer solar cell
000D90 (2009) Ohmic contact and space-charge-limited current in molybdenum oxide modified devices
001052 (2008) Properties of Au/Pt/Ti contact to p-InP by rapid thermal processing
001153 (2008) Etch pits observation and In distribution in mercury indium telluride single crystals
001415 (2007) Energy band alignment of an In2O3: Mo/Si heterostructure
001483 (2007) As-doped p-type ZnO films prepared by cosputtering ZnO and Zn3As2 targets
001856 (2005) An experimental investigation of Zn diffusion into InP and InGaAs
001B71 (2003) Ohmic contact and interfacial reaction of Ti/Al/Pt/Au metallic multi-layers on n-AlxGa1-xN/GaN heterostructures
001C77 (2002-07-01) Investigation of transparent and conductive undoped Zn2In2O5-x films deposited on n-type GaN layers
001D01 (2002-02-11) Ohmic contacts to p-type GaN mediated by polarization fields in thin InxGa1-xN capping layers
001D23 (2002) The effect of indium tin oxide as an ohmic contact for the 850 nm GaAs oxide-confined VCSELs
001E27 (2001-10-29) Low-resistance and high-transparency Ni/indium tin oxide ohmic contacts to p-type GaN
001E35 (2001-09) Surface analysis of (NH4)2Sx-treated InGaN using x-ray photoelectron spectroscopy
001E48 (2001-05-28) Investigation of indium tin oxide/zinc oxide multilayer ohmic contacts to n-type GaN isotype conjunction
002443 (1997-10-15) Enhanced real-space transfer in δ-doped GaAs/In0.1Ga0.9As/In0.25Ga0.75As two-step channel heterojunctions
002626 (1996) A new structure of in-based ohmic contacts to n-type GaAs
002630 (1995-11-15) PtGe ohmic contact to n-type InP

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Chine/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/KwdEn.i -k "Ohmic contacts" 

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/KwdEn.i  \
                -Sk "Ohmic contacts" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Chine/Analysis/biblio.hfd

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Chine
   |étape=   Analysis
   |type=    indexItem
   |index=    KwdEn.i
   |clé=    Ohmic contacts
}}
Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024