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Molecular beam condensation < Molecular beam epitaxy < Molecular beams  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 259.
[0-20] [0 - 20][0 - 50][20-40]
Ident.Authors (with country if any)Title
000020 (2014) Interface layer control and optimization of InAs/GaSb type-II superlattices grown by molecular beam epitaxy
000075 (2013) The investigation of GaInP solar cell grown by all-solid MBE
000078 (2013) The effects of injector doping densities on lasing properties of InP-based quantum cascade lasers at 4.3 μm
000209 (2013) Influence of GaAs(0 01 ) pregrowth surface morphology and reconstruction on the growth of InGaAs layers
000213 (2013) InP/InGaAs/InP DHBT structures with high carbon-doped base grown by gas source molecular beam epitaxy
000217 (2013) InAs/GaSb type-II superlattice mid-wavelength infrared focal plane array detectors grown by molecular beam epitaxy
000242 (2013) Growth of metamorphic InGaP layers on GaAs substrates
000269 (2013) Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy
000274 (2013) Effects of growth temperature and buffer scheme on characteristics of InP-based metamorphic InGaAs photodetectors
000423 (2012) Self-Assembled InGaAs Quantum Dot Clusters with Controlled Spatial and Spectral Properties
000454 (2012) Ordered versus random nucleation of InN islands grown by molecular beam epitaxy
000463 (2012) Morphology and shape dependent characteristics of InAs/InP(100) quantum dot laser grown by gas source molecular beam epitaxy
000652 (2011) Unusual resistive switching induced by voltage in La0.7Sr0.3MnO3 thin films
000703 (2011) Study of molecular-beam epitaxy growth on patterned GaAs ( 1 0 0) substrates by masked indium ion implantation
000710 (2011) Strain accumulation in InAs/InxGai1-xAs quantum dots
000711 (2011) Strain accumulation in InAs/InxGa1-xAs quantum dots
000729 (2011) Raman scattering and Rutherford backscattering studies on InN films grown by plasma-assisted molecular beam epitaxy
000730 (2011) Quantum dot lasers grown by gas source molecular-beam epitaxy
000758 (2011) Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy
000811 (2011) InP/InGaAs/InP DHBT structures with graded composition base grown by gas source molecular beam epitaxy
000850 (2011) GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy

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