Microelectromechanical device < Microelectronic fabrication < Microelectronics

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 69.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000025 (2014)		Improved efficiency of indium-tin-oxide-free flexible organic light-emitting devices
000048 (2013)		a-IGZO TFTs With Inductively Coupled Plasma Chemical Vapor Deposited SiOx Gate Dielectric
000073 (2013)		Theoretical analysis of the inter-diffusion coefficients in the AlGaInP material quantum well intermixing
000139 (2013)		Preparation and characterization of bowl-like porous ZnO film by electrodeposition using two-dimensional photonic crystal template
000174 (2013)		Morphology and properties of ZnO nanostructures by electrochemical deposition: effect of the substrate treatment : ZnO and Related Materials
000225 (2013)		Improved Quantum Efficiency in Semipolar (1101) InGaN/GaN Quantum Wells Grown on GaN Prepared by Lateral Epitaxial Overgrowth
000282 (2013)		Effect of sputtering power and annealing temperature on the properties of indium tin oxide thin films prepared from radio frequency sputtering using powder target
000287 (2013)		Effect of O2 Flow Rate During Channel Layer Deposition on Negative Gate Bias Stress-Induced Vth Shift of a-IGZO TFTs
000296 (2013)		Dependence of the optoelectronic properties of selenium-hyperdoped silicon on the annealing temperature
000362 (2012)		Transparent In-Plane-Gate Junctionless Oxide-Based TFTs Directly Written by Laser Scribing
000378 (2012)		Temperature dependent lasing characteristics of InAs/InP(100) quantum dot laser
000436 (2012)		Preparation of Sn-Ag-In Solder Bumps by Electroplating of Sn-Ag and Indium in Sequence and the Effect of Indium Addition on Microstructure and Shear Strength
000718 (2011)		Shallow-Deep InGaN Multiple-Quantum-Well System for Dual-Wavelength Emission Grown on Semipolar (1122) Facet GaN
000758 (2011)		Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy
000784 (2011)		Material Properties of MOCVD Grown AlGaN Layers Influenced by Indium-Incorporation
000788 (2011)		Low-Voltage Electric-Double-Layer TFTs on SiO2-Covered Paper Substrates
000804 (2011)		Influences of channel metallic composition on indium zinc oxide thin-film transistor performance
000838 (2011)		High power GaN-based LEDs with nano-structured Ga-doped ZnO (GZO) transparent conductive layer (TCL)
000919 (2011)		Development of free-standing InGaN LED devices on Al2O3/Si substrate by wet etching
000952 (2011)		An Indium-Free Transparent Resistive Switching Random Access Memory
000B20 (2010)		Influence of oxygen flow rate on microstructural, electrical and optical properties of indium tin tantalum oxide films

---

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Chine/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/KwdEn.i -k "Microelectronic fabrication" 

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/KwdEn.i  \
                -Sk "Microelectronic fabrication" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Chine/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Chine
   |étape=   Analysis
   |type=    indexItem
   |index=    KwdEn.i
   |clé=    Microelectronic fabrication
}}

---

This area was generated with Dilib version V0.5.77. Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024