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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Keywords » - entrée « MOVPE method »
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MOVPE < MOVPE method < MSM structure  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 44.
[0-20] [0 - 20][0 - 44][20-40]
Ident.Authors (with country if any)Title
000073 (2013) Theoretical analysis of the inter-diffusion coefficients in the AlGaInP material quantum well intermixing
000160 (2013) Optical properties of InN films grown by pressurized-reactor metalorganic vapor phase epitaxy
000304 (2013) Continuous-Flow MOVPE of Ga-Polar GaN Column Arrays and Core-Shell LED Structures
000308 (2013) Compositionally undulating step-graded InAsyP1-y buffer layer growth by metal-organic chemical vapor deposition
000543 (2012) Enhancement of light-emission efficiency of ultraviolet InGaN/GaN multiple quantum well light emitting diode with InGaN underlying layer
000823 (2011) Improvement of structural and luminescence properties in InGaN/GaN multiple quantum wells by symmetrical thin low temperature-GaN layers
000940 (2011) Behavioural investigation of InN nanodots by surface topographies and phase images
000C37 (2010) A study of indium incorporation in In-rich InGaN grown by MOVPE
000F24 (2009) Design and epitaxy of structural III-nitrides
000F53 (2009) Annealing behaviors of long-wavelength InAs/GaAs quantum dots with different growth procedures by metalorganic chemical vapor deposition
001252 (2007) Unselective regrowth buried heterostructure long-wavelength superluminescent diode realized with MOVPE
001329 (2007) Photoluminescence study of AlGaInP/GaInP quantum well intermixing induced by zinc impurity diffusion
001400 (2007) Fabrication of InGaAlAs MQW buried heterostructure lasers by narrow stripe selective MOVPE
001456 (2007) Design and performance of monolithic integrated electro-absorption modulated distributed feedback laser
001478 (2007) Butt-coupled MOVPE growth for high-performance electro-absorption modulator integrated with a DFB laser
001588 (2006) Narrow stripe selective growth of oxide-free InGaAlAs/InGaAlAs MQWs by ultra-low pressure MOVPE
001848 (2005) Characteristics of oxide-free InGaAlAs layers grown by narrow stripe selective MOVPE
001947 (2004) Study of photoluminescence and absorption in phase-separation InGaN films
001987 (2004) MOVPE growth of grade-strained bulk InGaAs/InP for broad-band optoelectronic device applications
001988 (2004) MOVPE growth and fabrication of 1.3 μm high power InGaAsP-InP polarization-insensitive superluminescent diodes with complex strained quantum wells
001A06 (2004) High power polarization-insensitive 1.3 μm InGaAsP-InP quantum-well superluminescent emission diodes grown by MOVPE

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