Serveur d'exploration sur l'Indium - Analysis (Chine)

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MOS junctions < MOSFET < MOVPE  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 8.
Ident.Authors (with country if any)Title
000541 (2012) Experimental Investigation of Border Trap Generation in InGaAs nMOSFETs With Al2O3 Gate Dielectric Under PBTI Stress
001179 (2008) Effects of indium ion implantation on the total dose hardness of fully depleted SOI NMOSFET
001918 (2004-01-26) One-polymer active pixel
001E24 (2001-11-01) Optimum Treatment for Improvement of Indium-Halo Structure for Sub-0.1 μm n-Type Metal-Oxide-Semiconductor Field-Effect Transistor
001E73 (2001-01-15) The Effects of Super-Steep-Retrograde Indium Channel Profile on Deep Submicron n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor
002152 (1999-12-01) Barrier height enhancement of Ni/n-type InP Schottky contact using a thin praseodymium interlayer
002153 (1999-12-01) Barrier height enhancement of Ni/n-type InP Schottky contact using a thin praseodymium interlayer
002186 (1999-06-15) 1/f noise measurements on indium antimonide metal-oxide-semiconductor field-effect transistors

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EXPLOR_STEP=IndiumV3/Data/Chine/Analysis
HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/KwdEn.i -k "MOSFET" 
HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/KwdEn.i  \
                -Sk "MOSFET" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Chine/Analysis/biblio.hfd 

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