Low noise amplifier < Low pressure < Low temperature

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 29.
[0-20] [0 - 20][0 - 29][20-28][20-40]

Ident.	Authors (with country if any)	Title
000254 (2013)		Ferromagnetism in Cr doped In2O3
000808 (2011)		Influence of buffer layer thickness and epilayer's growth temperature on crystalline quality of InAs0.6P0.4/InP grown by LP-MOCVD
000B66 (2010)		Enhancement in light extraction efficiency from GaN based LEDs with nanopores ITO p-contact grown on patterned sapphire substrate
000C01 (2010)		Effect of epilayer's growth temperature on crystalline quality of In As0.6P0.4/InP grown by two-step growth method
000F05 (2009)		Effect of buffer thickness on properties of In0.8Ga0.2As/InP with two-step growth technique
001083 (2008)		Nitrogen Incorporation Characteristics of 4H-SiC Epitaxial Layer
001577 (2006)		Optimization of active region for 1.3-μm GaInAsP compressive-strain multiple-quantum-well ridge waveguide laser diodes
001588 (2006)		Narrow stripe selective growth of oxide-free InGaAlAs/InGaAlAs MQWs by ultra-low pressure MOVPE
001621 (2006)		Growth of InAs quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition and their optical properties
001703 (2005)		Thermal annealing of InN films grown by metal-organic chemical vapor deposition
001928 (2004)		The influence of Si-doping to the characteristics of AlGaInP/GaInP multiple quantum wells
001A34 (2004)		Crack-free InAlGaN quaternary alloy films grown on Si(1 1 1) substrate by metalorganic chemical vapor deposition
001B43 (2003)		Structure characteristics of InGaN quantum dots fabricated by passivation and low temperature method
001B46 (2003)		Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0 0 0 1) sapphire substrate
001C05 (2003)		Field-aided collection in GaInP2 top solar cells
001C18 (2003)		Effects of TMIn flow rate of barrier layer on the optical and structural properties of InxGa1-xN/InyGa1-yN multiple quantum wells
001D37 (2002)		Statistical investigation on morphology development of gallium nitride in initial growth stage
001D44 (2002)		Photoluminescence of InAs self-organized quantum dots on (001)InP substrate with GaAs interlayer
001D57 (2002)		Low temperature photoluminescence of InAs self-organized quantum dots on (001) InP substrate with GaAs interlayer
001F32 (2001)		Indium doping effect on GaN in the initial growth stage
002095 (2000)		In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE

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