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Serveur d'exploration sur l'Indium - Analysis (Chine)

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List of bibliographic references

Number of relevant bibliographic references: 26.
[0-20] [0 - 20][0 - 26][20-25][20-40]
Ident.Authors (with country if any)Title
000020 (2014) Interface layer control and optimization of InAs/GaSb type-II superlattices grown by molecular beam epitaxy
000113 (2013) Single InAs Quantum Dot Grown at the Junction of Branched Gold-Free GaAs Nanowire
000119 (2013) Resolving exciton diffusion in InGaAs quantum wells using micro-photoluminescence mapping with a lateral excitation
000227 (2013) Impact of double-cap procedure on the characteristics of InAs/InGaAsP/ InP quantum dots grown by metal-organic chemical vapor deposition
000243 (2013) Growth of InAs quantum dots on Si-based GaAs nanowires by controlling the surface adatom diffusion
000377 (2012) Temperature-dependent photoluminescence of CuInS2 quantum dots
000520 (2012) Growth and characterization of InGaN nanodots hybrid with InGaN/GaN quantum wells
000685 (2011) Temperature-dependent Raman investigation of CulnS2 with mixed phases of chalcopyrite and CuAu
000C34 (2010) Abnormal temperature dependent photoluminescence of self-assembled InAs/GaAs surface quantum dots with high areal density
001011 (2008) Synthesis, optical and transport properties of single-crystal N-deficient InN nanowires
001623 (2006) Growth and characterization of InAs layers obtained by liquid phase epitaxy from Bi solvents
001674 (2006) Crack control in GaN grown on silicon (111) using in doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition
001770 (2005) Optical properties of digital-alloy In0.49(Ga1-zAlz)0.51P/GaAs and InGaP/In0.49(Ga1-zAlz)0.51P multi-quantum wells grown by molecular-beam epitaxy
001A23 (2004) Effects of indium doping on the properties of AlAs/GaAs quantum wells and inverted AlGaAs/GaAs two-dimensional electron gas
001C25 (2003) Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs
001C46 (2003) Abnormal temperature dependence of photoluminescence from self-assembled InAs quantum dots covered by an InAlAs/InGaAs combination layer
002116 (2000) Effects of interdiffusion on the luminescence of InAs/GaAs quantum dots covered by InGaAs overgrowth layer
002306 (1998-09-01) InGaAs/GaAs quantum dots on (111)B GaAs substrates
002334 (1998-03-15) Self-organized InAs/GaAs quantum dots grown by gas source molecular beam epitaxy
002458 (1997-05-15) Characteristics of InxGa1-xAs/GaAs pseudomorphic modulation doped field effect transistor
002602 (1996) Optical properties of quaternary GaInAsSb/AlGaAsSb strained quantum wells

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