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Serveur d'exploration sur l'Indium - Analysis (Chine)

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Line defects < Line intensity < Line narrowing  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 19.
Ident.Authors (with country if any)Title
000062 (2013) Tuning emission property of CdS nanowires via indium doping
000358 (2012) Two-colour mid-infrared absorption in InAs/GaSb type II and broken-gap quantum wells under gated electric field
000567 (2012) Effects of p-type doping on the optical properties of InAs/GaAs quantum dots
000A06 (2010) Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well
000A33 (2010) Studies on the electrochemiluminescent behavior of luminol on indium tin oxide (ITO) glass
001A80 (2003-08-15) Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths
001A84 (2003-07-28) Transport characteristics of InAs/GaAs quantum-dot infrared photodetectors
001A92 (2003-06-15) Quantum-well-width dependencies of postgrowth thermal annealing effects of InGaN/GaN quantum wells
001C58 (2002-10-15) Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures
001E36 (2001-09) Enhanced luminance of ZnGa2O4 phosphor by In2O3 doping
001E38 (2001-08-15) Thermal redistribution of photocarriers between bimodal quantum dots
001E52 (2001-05-01) Comparison of optical transitions in InGaN quantum well structures and microdisks
001E59 (2001-03-26) Electroluminescence at silicon band gap energy from mechanically pressed indium-tin-oxide/Si contact
002009 (2000-06-26) Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells
002158 (1999-11-15) AlGaInP light-emitting diodes with mirror substrates fabricated by wafer bonding
002208 (1999-01) Photoluminescence study of high-quality InGaAs/GaAs quantum dots on (111)B GaAs substrates
002210 (1999-01) Excitation density and temperature dependent photoluminescence of InGaAs self-assembled quantum dots
002334 (1998-03-15) Self-organized InAs/GaAs quantum dots grown by gas source molecular beam epitaxy
002619 (1996) Enhancement of organic electroluminescent intensity by charge transfer from guest to host

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