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Serveur d'exploration sur l'Indium - Analysis (Chine)

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LEED diffraction < LPE < Laccase  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 25.
[0-20] [0 - 20][0 - 25][20-24][20-40]
Ident.Authors (with country if any)Title
000C09 (2010) Dielectric functions and the interband critical points of InAs0.05Sb0.95 film grown by a modified LPE technique
001092 (2008) Modified LPE technique growth and properties of long wavelength InAs0.05Sb0.95 thick film
001623 (2006) Growth and characterization of InAs layers obtained by liquid phase epitaxy from Bi solvents
001849 (2005) Changing planar thin film growth into self-assembled island formation by adjusting experimental conditions
001889 (2004-05) Study of AlGaInP multiquantum-well/double heterostructure light-emitting diodes with In-added GaP window layer regrown by antimony-based liquid phase epitaxy
001913 (2004-03) Electrical Properties of Melt-Epitaxy-Grown InAs0.04Sb0.96 Layers with Cutoff Wavelength of 12 μm
001A77 (2003-09) The Comparisons between GaP Window Layers of Double-Heterojunction Light-Emitting Diodes using Various Dopants and Source Melts Regrown by Indium-Addition Liquid Phase Epitaxy
002094 (2000) InGaAsP/GaAs SCH SQW laser arrays grown by LPE
002196 (1999-03) Growth and characterization of high-quality InAs0.86Sb0.05P0.09 alloy by liquid-phase epitaxy
002262 (1999) Liquid phase epitaxial growth of AlGaInPAs on GaAs substrates
002295 (1998-11-15) Raman scattering of InAs1-x-ySbxPy quaternary alloys
002301 (1998-10) Thermal properties of InAs0.86Sb0.05P0.09 homostructure diodes
002347 (1998) Threshold reduction in strained-layer InGaAs/GaAs quantum well lasers by liquid phase epitaxy regrowth
002384 (1998) Liquid-phase epitaxial growth of InAsPSb/InAs heterostructure
002385 (1998) Liquid phase epitaxy growth of AlxGayIn1-x-yPzAs1-z/GaAs with direct band gap up to 2.0 eV
002390 (1998) Influence of the elastic energy due to lattice mismatch on phase equilibria in the epitaxy of As-Ga-In layers
002460 (1997-05-12) The enhancement of InGaAs Schottky barrier height by the addition of Pr2O3 and In2O3 in the liquid phase epitaxy
002575 (1996-02-15) Low-temperature photoluminescence of sulfur- and magnesium-doped InGaP epilayers grown by liquid-phase epitaxy
002643 (1995-08-15) Photoluminescence of three phonon replicas of the bound exciton in undoped InGaP prepared by liquid phase epitaxy
002650 (1995-07-15) Solid-liquid and solid-vapor equilibrium of Ga-In-As-Sb system and artificial neural network prediction
002657 (1995-07) Annealing-induced near-surface ordering in disordered Ga0.5In0.5P

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