Irreversible processes < Island structure < Isolation unit

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 38.
[0-20] [0 - 20][0 - 38][20-37][20-40]

Ident.	Authors (with country if any)	Title
000125 (2013)		Pulsed laser deposition and characterization of epitaxial CuInS2 thin films on c-plane sapphire substrates
000257 (2013)		Fabrication of nanorod InGaN/GaN multiple quantum wells with self-assembled Ni nano-island masks
000454 (2012)		Ordered versus random nucleation of InN islands grown by molecular beam epitaxy
000553 (2012)		Electrodeposition of Platinum on Plastic Substrates as Counter Electrodes for Flexible Dye-Sensitized Solar Cells
000779 (2011)		Modulation of surface-enhanced Raman spectra by depth selective excitation of embedded indium tin oxide nanoisland arrays
000A36 (2010)		Structure and optical properties of InN and InAlN films grown by rf magnetron sputtering
000A89 (2010)		Modification of silver anode and cathode for a top-illuminated organic photovoltaic device
000C83 (2009)		The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD
000D70 (2009)		Physical properties and growth kinetics of co-sputtered indium-zinc oxide films
000E16 (2009)		Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition
000E63 (2009)		Finite element analysis of conical, dome and truncated InAs quantum dots with consideration of surface effects
001539 (2006)		Study of nucleation positions of InAs islands on stripe-patterned GaAs (100) substrate
001726 (2005)		Surface morphology of GaInP buffer layers and its impact on the lateral distribution of self-organized InP islands
001800 (2005)		In situ revelation of a zinc-blende InN wetting layer during Stranski-Krastanov growth on GaN(0001) by molecular-beam epitaxy
001863 (2005)		A novel method for positioning of InAs islands on GaAs (110)
001930 (2004)		The fabrication of self-aligned InAs nanostructures on GaAs(331)A substrates
001A54 (2003-12-22)		InN island shape and its dependence on growth condition of molecular-beam epitaxy
001A66 (2003-10-15)		Scaling of three-dimensional InN islands grown on GaN(0001) by molecular-beam epitaxy
001D34 (2002)		Structure and optical properties of self-assembled InAs/GaAs quantum dots with In0.15Ga0.85As underlying layer
001E58 (2001-04-01)		Evolution of island-pit surface morphologies of InAs epilayers grown on GaAs (001) substrates
001F23 (2001)		Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0≤x≤0.3) layer

---

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Chine/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/KwdEn.i -k "Island structure" 

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/KwdEn.i  \
                -Sk "Island structure" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Chine/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Chine
   |étape=   Analysis
   |type=    indexItem
   |index=    KwdEn.i
   |clé=    Island structure
}}

---

This area was generated with Dilib version V0.5.77. Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024