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Serveur d'exploration sur l'Indium - Analysis (Chine)

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Injection current < Injection laser < Ink  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 21.
[0-20] [0 - 20][0 - 21][20-20][20-40]
Ident.Authors (with country if any)Title
000073 (2013) Theoretical analysis of the inter-diffusion coefficients in the AlGaInP material quantum well intermixing
001128 (2008) Highly stable white light from ultraviolet laser diode
001134 (2008) High Power 1064nm Laser Diode Array and Measuring Chip Temperature Based on Emitting Spectra
001216 (2008) Cathodoluminescence study of GaN-based film structures
001806 (2005) High-volume production of 650nm GaInP/AlGaInP laser diodes
001835 (2005) Dual wavelength 650-780nm laser diodes
001F27 (2001) MBE grown 2.0 μm InGaAsSb/AlGaAsSb MQW ridge waveguide laser diodes
002141 (2000) An InP-based monolithic integration of 1.55um MQW laser diode and HBT driver circuit
002284 (1999) Effect of erbium concentration on upconversion luminescence of Er:Yb :phosphate glass exited by InGaAs laser diode
002348 (1998) Thermal properties of high-power InGaAsP/InP stripe-geometry laser diode : calculation and analyses
002350 (1998) The study of single mode 650nm AlGaInP quantum well laser diodes for DVD
002358 (1998) Single-lobe operation of BA InGaAsP/GaAs SCH SQW lasers
002392 (1998) In0.2Ga0.8As/GaAs quantum well laser with C doped cladding and ohmic contact layers
002398 (1998) High temperature operation of 650nm AlGaInP quantum well laser diodes grown by LP-MOCVD
002400 (1998) High performance 1.55μm InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method
002538 (1997) 1.55 μm laser diodes with leaky waveguide structure
002698 (1995) Small signal circuit model of single-mode laser diode for simulation of nonlinear distortion
002798 (1994) High temperature and low threshold current operation of strained AlGaInP/Ga0.4In0.6P multi-quantum well laser diodes emitting at 676nm
002805 (1994) An improved approach and experimental results of a low-frequency noise measurement technique used for reliability estimation of diode lasers
002850 (1992) The InxGa1-xAsy(0.53 < x < 1, 0 < y < 1) compound semiconductor for LD structures by organometallic vapor-phase epitaxy
002914 (1991) A common-cavity two-section InGaAsP/InP bistable laser with a low optical switching power

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