Serveur d'exploration sur l'Indium - Analysis (Chine)

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Indium compound < Indium compounds < Indium fluorides  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 408.
[0-20] [0 - 20][0 - 50][20-40]
Ident.Authors (with country if any)Title
000193 (2013) Investigation of copper indium gallium selenide material growth by selenization of metallic precursors
000308 (2013) Compositionally undulating step-graded InAsyP1-y buffer layer growth by metal-organic chemical vapor deposition
000345 (2013) A Chiral Tetrahedral Framework with Tetrahedral Guests for Catalysis and Photoluminescence
000573 (2012) Effects of AlN interlayer on the transport properties of nearly lattice-matched InAIN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor deposition
000717 (2011) Shape and crystal phase controlled synthesis of InSe nanocrystals via a simple and facile way
000837 (2011) High quality InAlN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor deposition
000B27 (2010) In2O3 nanorod arrays grown at grain-boundary triple junctions of Cu-Sn alloy substrate
000D67 (2009) Precise growth control and characterization of strained AlInAs and GaInAs for quantum cascade lasers by GSMBE
000D97 (2009) New indium selenite-oxalate and indium oxalate with two-and three-dimensional structures
001124 (2008) Hydrothermal Synthesis and Crystal Structure of Polar and Nonpolar Compounds in Indium Iodate Family
001265 (2007) The high mobility InN film grown by MOCVD with GaN buffer layer
001420 (2007) Electronic band structures and transport properties of wurtzite indium nitride grown by metalorganic vapor phase epitaxy
001872 (2004-06-28) Investigations on V-defects in quaternary AlInGaN epilayers
001873 (2004-06-28) Improvements of InGaN/GaN quantum-well interfaces and radiative efficiency with InN interfacial layers
001874 (2004-06-28) Controlled carbon nanotube sheathing on ultrafine InP nanowires
001876 (2004-06-21) Luminescence efficiency of InGaN multiple-quantum-well ultraviolet light-emitting diodes
001878 (2004-06-15) 20 meV-deep donor level in InN film of 0.76 eV band gap grown by plasma-assisted nitrogen source
001879 (2004-06-07) Ultrafast valence intersubband hole relaxation in InGaN multiple-quantum-well laser diodes
001881 (2004-06) Electroluminescent Studies of Emission Characteristics of InGaAsN/GaAs Injection Lasers in a Wide Temperature Range
001883 (2004-05-15) Effect of dye concentration on the charge carrier transport in molecularly doped organic light-emitting diodes
001884 (2004-05-15) Cluster size and composition variations in yellow and red light-emitting InGaN thin films upon thermal annealing

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