Indium arsenide < Indium arsenides < Indium bromide

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List of bibliographic references

Number of relevant bibliographic references: 536.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000020 (2014)		Interface layer control and optimization of InAs/GaSb type-II superlattices grown by molecular beam epitaxy
000060 (2013)		Tuning intersubband absorption in a shallow InAs/InP quantum wire via a transverse tilted magnetic field
000078 (2013)		The effects of injector doping densities on lasing properties of InP-based quantum cascade lasers at 4.3 μm
000096 (2013)		Surface roughness induced electron mobility degradation in InAs nanowires
000113 (2013)		Single InAs Quantum Dot Grown at the Junction of Branched Gold-Free GaAs Nanowire
000119 (2013)		Resolving exciton diffusion in InGaAs quantum wells using micro-photoluminescence mapping with a lateral excitation
000120 (2013)		Reducing self-compensating Mn interstitials in (Ga, Mn)As via nanostructure engineering
000124 (2013)		Quantized Conductance and Its Correlation to the Supercurrent in a Nanowire Connected to Superconductors
000147 (2013)		Physical Mechanism of Surface Roughening of the Radial Ge-Core/Si-Shell Nanowire Heterostructure and Thermodynamic Prediction of Surface Stability of the InAs-Core/GaAs-Shell Nanowire Structure
000156 (2013)		Phase Separation Induced by Au Catalysts in Ternary InGaAs Nanowires
000188 (2013)		Large energy band-gap tuning of 980 nm InGaAs/InGaAsP quantum well structure via quantum well intermixing
000209 (2013)		Influence of GaAs(0 01 ) pregrowth surface morphology and reconstruction on the growth of InGaAs layers
000213 (2013)		InP/InGaAs/InP DHBT structures with high carbon-doped base grown by gas source molecular beam epitaxy
000217 (2013)		InAs/GaSb type-II superlattice mid-wavelength infrared focal plane array detectors grown by molecular beam epitaxy
000227 (2013)		Impact of double-cap procedure on the characteristics of InAs/InGaAsP/ InP quantum dots grown by metal-organic chemical vapor deposition
000235 (2013)		Highly Responsive Ultrathin GaS Nanosheet Photodetectors on Rigid and Flexible Substrates
000236 (2013)		High-speed direct modulation unidirectional emission microring lasers
000242 (2013)		Growth of metamorphic InGaP layers on GaAs substrates
000243 (2013)		Growth of InAs quantum dots on Si-based GaAs nanowires by controlling the surface adatom diffusion
000244 (2013)		Growth and large-scale assembly of InAs/InP core/shell nanowire: effect of shell thickness on electrical characteristics
000269 (2013)		Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy

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