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Serveur d'exploration sur l'Indium - Analysis (Chine)

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List of bibliographic references

Number of relevant bibliographic references: 19.
Ident.Authors (with country if any)Title
000183 (2013) Magnetic properties and microstructure investigation of electrodeposited FeNi/ITO films with different thickness
000193 (2013) Investigation of copper indium gallium selenide material growth by selenization of metallic precursors
000470 (2012) Magnetically separable γ-Fe2O3@SiO2@Ce-doped TiO2 core-shell nanocomposites: Fabrication and visible-light-driven photocatalytic activity
000476 (2012) Low-Voltage High-Stability Indium-Zinc Oxide Thin-Film Transistor Gated by Anodized Neodymium-Doped Aluminum
000623 (2012) Analysis of Interface Scattering in AlGaN/GaN/InGaN/GaN Double-Heterojunction High-Electron-Mobility Transistors
000845 (2011) Growth and domain structures of novel piezoelectric crystals Pb(In1/2Nb1/2) O3-Pb(Mg1/3Nb2/3)O3-PbTiO3
000906 (2011) Effect of built-in electric field in photovoltaic InAs quantum dot embedded GaAs solar cell
000982 (2010) Tunable the emission wavelength of InGaN/GaN multi-quantum wells employing strain-accommodative structures
000B21 (2010) Influence of annealing temperature on field emission from tetrapod-shaped ZnO-whisker films obtained by screen printing
000B42 (2010) Gate-controlled electron-electron interactions in an In0.53Ga0.47As/InP quantum well structure
000F98 (2008) The martensitic transformation and the magnetocaloric effect in Ni50-xMn38+xIn12 alloys
001113 (2008) Influence of heterojunction interface on exciplex emission from organic light-emitting diodes under electric fields
001305 (2007) Spin quantum beats of bright and dark excitonic states in neutral InAs quantum dots
001653 (2006) Effecting on the spectrum of the blue organic light-emitting diodes by the indium tin oxide surface treatment
001678 (2006) Charge carriers bulk recombination instead of electroplex emission after their tunneling through hole-blocking layer in OLEDs
001963 (2004) Relatively large electric-field induced electron drift velocity observed in an InxGa1-xAs-based p-i-n semiconductor nanostructure
002836 (1993) Field effect on thermal emission from the 0.40 eV electron level in InGaP
002916 (1990) Transport properties in δ-doping of InP
002955 (1988) Magnetoplasmon-phonon coupling in a GaxIn1-xAs heterostructure

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