Serveur d'exploration sur l'Indium - Analysis (Chine)

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High efficiency < High electron mobility transistor < High electron mobility transistors  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 11.
Ident.Authors (with country if any)Title
000623 (2012) Analysis of Interface Scattering in AlGaN/GaN/InGaN/GaN Double-Heterojunction High-Electron-Mobility Transistors
001027 (2008) Study on Applications of Terahertz technology
001741 (2005) Simulation of InP-based monolithically integrated PIN-HEMT front-end optical receiver
001B95 (2003) High-performance enhancement-mode pseudomorphic InGaP/InGaAs/GaAs HEMT structures by gas source molecular beam epitaxy
001E79 (2001) Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure
001F41 (2001) High-quality metamorphic HEMT grown on GaAs substrates by MBE
001F44 (2001) Gsmbe growth of InGaP/(In)GaAs modulation-doped heterostructures and their applications to HEMT and HHMT
001F48 (2001) GSMBE growth of InP-based MSM/HEMT OEIC structures
002407 (1998) Growth and characterization of InGaAs/InAlAs/InP high-electron-mobility transistor structures towards high channel conductivity
002622 (1996) Characterization of deep centers in AlGaAs/InGaAs/GaAs pseudomorphic HEMT structures grown the molecular beam epitaxy and hydrogen treatment
002845 (1992) n-AlGaAs/InGaAs/n-GaAs double-modulation doped pseudomorphic HMET with MIS structure

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