Keywords
Analysis
Chine
Racine
Analysis
Chine
Repository
Accueil
Racine
Racine

Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Keywords » - entrée « High density »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
High current < High density < High efficiency  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 16.
Ident.Authors (with country if any)Title
000059 (2013) Two dimensional electron gas mobility limited by scattering of quantum dots with indium composition transition region in quantum wells
000160 (2013) Optical properties of InN films grown by pressurized-reactor metalorganic vapor phase epitaxy
000174 (2013) Morphology and properties of ZnO nanostructures by electrochemical deposition: effect of the substrate treatment : ZnO and Related Materials
000465 (2012) Microstructural characterization of Cu-poor Cu (In, Ga)Se2 surface layer
000541 (2012) Experimental Investigation of Border Trap Generation in InGaAs nMOSFETs With Al2O3 Gate Dielectric Under PBTI Stress
000578 (2012) Effect of Target Density on Microstructural, Electrical, and Optical Properties of Indium Tin Oxide Thin Films
000587 (2012) Double-emission-layer green phosphorescent OLED based on LiF-doped TPBi as electron transport layer for improving efficiency and operational lifetime
000A05 (2010) Temperature dependent photoluminescence of an In(Ga)As/GaAs quantum dot system with different areal density
000B16 (2010) Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density
000C34 (2010) Abnormal temperature dependent photoluminescence of self-assembled InAs/GaAs surface quantum dots with high areal density
001021 (2008) Surface and subsurface damages in nanoindentation tests of compound semiconductor InP
001089 (2008) Multifunctional metallophosphors with anti-triplet-triplet annihilation properties for solution-processable electroluminescent devices
001212 (2008) Charge storage characteristics of metal-induced nanocrystalline in erbium-doped amorphous silicon films
001462 (2007) Current-induced phase partitioning in eutectic indium-tin Pb-Free solder interconnect
001463 (2007) Crystal-originated particles in germanium-doped Czochralski silicon crystal
001852 (2005) Applications of ICP in optoelectronic device fabrication

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Chine/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/KwdEn.i -k "High density" 

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/KwdEn.i  \
                -Sk "High density" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Chine/Analysis/biblio.hfd

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Chine
   |étape=   Analysis
   |type=    indexItem
   |index=    KwdEn.i
   |clé=    High density
}}
Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024