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Heterojunction transistor < Heterojunctions < Heteroleptic complex  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 44.
[0-20] [0 - 20][0 - 44][20-40]
Ident.Authors (with country if any)Title
000448 (2012) Phase Selection Enabled Formation of Abrupt Axial Heterojunctions in Branched Oxide Nanowires
000510 (2012) High-Efficiency Ferroelectric-Film Solar Cells with an n-type Cu2O Cathode Buffer Layer
000932 (2011) Controllable synthesis and field emission enhancement of Al2O3 coated In2O3 core-shell nanostructures
000A50 (2010) Scanning capacitance microscopy characterization on diffused p-n junctions of InGaAs/InP infrared detectors
000C07 (2010) Different materials as a cathode modification layer on the impact of organic solar cells
000D81 (2009) Performance of gas source MBE-grown wavelength-extended InGaAs photodetectors with different buffer structures
001399 (2007) Fabrication of ZnO and its enhancement of charge injection and transport in hybrid organic/inorganic light emitting devices
001795 (2005) Indium tin oxide thin films by bias magnetron rf sputtering for heterojunction solar cells application
001B46 (2003) Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0 0 0 1) sapphire substrate
001D44 (2002) Photoluminescence of InAs self-organized quantum dots on (001)InP substrate with GaAs interlayer
001D57 (2002) Low temperature photoluminescence of InAs self-organized quantum dots on (001) InP substrate with GaAs interlayer
001D76 (2002) Experimental proof of cathodoluminescence-like (CL-like) emission for inorganic/organic heterojunction
001F31 (2001) Influence of growth conditions on self-assembled InAs nanostructures grown on (001)InP substrate by molecular beam epitaxy
002046 (2000) Wavelength-tunable narrow-linewidth semiconductor fiber-ring laser
002047 (2000) Two-step method to grow InAs epilayer on GaAs substrate using a new prelayer
002070 (2000) Room temperature 1.55 μm emission from InAs quantum dots grown on (001)InP substrate by molecular beam epitaxy
002073 (2000) Real-time observation of temperature rise and thermal breakdown processes in organic LEDs using an IR imaging and analysis system
002093 (2000) InP-based enhancement-mode pseudomorphic HEMT with strained In0.45Al0.55As barrier and In0.75Ga0.25As channel layers
002224 (1999) The analysis of the performance for P-p-n and N-n-p hetero- and homojunction GaSb/Ga0.8In0.2As0.19Sb0.81 photodetectors
002229 (1999) Study of overgrowth heterostructure InSb/GaAs by scanning electron acoustic microscopy
002240 (1999) Self-organization of wire-like InAs nanostructures on InP

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