Heterojunction < Heterojunction bipolar transistors < Heterojunction transistor

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List of bibliographic references

Number of relevant bibliographic references: 34.
[0-20] [0 - 20][0 - 34][20-33][20-40]

Ident.	Authors (with country if any)	Title
000213 (2013)		InP/InGaAs/InP DHBT structures with high carbon-doped base grown by gas source molecular beam epitaxy
000326 (2013)		An improved model for InP/InGaAs double heterojunction bipolar transistors
000368 (2012)		The model parameter extraction and simulation for the effects of gamma irradiation on the DC characteristics of InGaP/GaAs single heterojunction bipolar transistors
000643 (2012)		A Combined Model With Electrothermal Coupling and Electromagnetic Simulation for Microwave Multifinger InP-Based DHBTs
000809 (2011)		Influence of a Barrier Layer on the Formation of AuBe Ohmic Contact With the p-GaAs Bases of Heterojunction Bipolar Transistors
000811 (2011)		InP/InGaAs/InP DHBT structures with graded composition base grown by gas source molecular beam epitaxy
000863 (2011)		Extrinsic Base Surface Passivation in Terahertz GaAsSb/InP DHBTs Using InGaAsP Ledge Structures
000C50 (2010)		A Composite Transistor to Suppress Kink Phenomenon in HBTs for Broadband Design
001018 (2008)		Surface-recombination-free InGaAs/InP HBTs and the base contact recombination
001027 (2008)		Study on Applications of Terahertz technology
001210 (2008)		Common-base multi-finger submicron InGaAs/InP double heterojunction bipolar transistor with fmax of 305 GHz
001388 (2007)		Heavily carbon-doped p-type InGaAs grown by gas source molecular beam epitaxy for application to heterojunction bipolar transistors
001609 (2006)		InGaP/GaAs heterojunction bipolar transistor grown by solid-source molecular beam epitaxy with a GaP decomposition source
001802 (2005)		Improved analytical method for determination of small-signal equivalent-circuit model parameters for InP/InGaAs HBTs
001836 (2005)		Direct extraction of InP HBT noise parameters based on noise-figure measurement system
001846 (2005)		Comments on: Microwave noise modeling for InP-InGaAs HBTs. Authors' reply
001899 (2004-04)		Reduction in Turn-on Voltage in GaInNAs and InGaAs-Based Double-Heterojunction Bipolar Transistors
001A39 (2004)		Characteristics of an InP-InGaAs-InGaAsP HBT
001A52 (2003-12-29)		Breakdown characteristics of InP/InGaAs composite-collector double heterojunction bipolar transistor
001A62 (2003-11)		Investigation of InGaP/GaAs heterojunction bipolar transistor with doping graded base
001A71 (2003-09-29)		Multiple negative differential resistance of InP/InGaAs superlattice-emitter resonant-tunneling bipolar transistor at room temperature

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