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Heterocyclic copolymer < Heteroepitaxy < Heterogeneity  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 27.
[0-20] [0 - 20][0 - 27][20-26][20-40]
Ident.Authors (with country if any)Title
000515 (2012) Heteroepitaxial Growth of GaSb Nanotrees with an Ultra-Low Reflectivity in a Broad Spectral Range
000824 (2011) Improvement of structural and electrical properties of Cu2O films with InN epilayers
001922 (2004) Transport properties of InAs epilayers grown on GaAs substrates by using the prelayer technique
001B47 (2003) Strain relaxation of InAs epilayer on GaAs under In-rich conditions
001B53 (2003) Raman spectroscopic studies of InAs epilayers grown on the GaAs (001) substrates
001B90 (2003) In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate
001C33 (2003) Correlation of structural and optical investigation of InGaAs/InAlAs quantum cascade laser
001D36 (2002) Strain relaxation of InP film directly grown on GaAs patterned compliant substrate
001E05 (2002) A novel line-order of InAs quantum dots on GaAs
001E96 (2001) Surface corrugation of In0.15Ga0.85As layers grown on (5 5 3) b-oriented GaAs substrates by molecular beam epitaxy
001F02 (2001) Structural anisotropy and optical properties of InxGa1-xAs quantum dots on GaAs(001)
002048 (2000) Two-dimensional ordering of self-assembled InAs quantum dots grown on (3 1 1)B InP substrate
002053 (2000) The structural and photoluminescence properties of self-organized quantum dots in InAs/In0.53 Ga0.47 As multilayer on InP substrate
002055 (2000) The effect of substrate orientation on the morphology of InAs nanostructures on (0 0 1) and (1 1 n)A/B (n = 1-5) InP substrates
002059 (2000) Temperature and excitation power dependence of the optical properties of InAs self-assembled quantum dots grown between two Al0.5Ga0.5As confining layers
002146 (2000) 1.35 μm photoluminescence from In0.5Ga0.5As/GaAs islands grown by molecular beam epitaxy via cycled (InAs)1/(GaAs)1 monolayer deposition
002233 (1999) Structural and optical characterization of InAs nanostructures grown on high-index InP substrates
002234 (1999) Structural and optical characteristics of self-organized InAs quantum dots grown on GaAs (3 1 1)A substrates
002238 (1999) Size quantization effects in InAs self-assembled islands on InP(0 0 1) at the onset of 2D-to-3D transition
002242 (1999) Self-assembled InAs and In0.9Al0.1As quantum dots on (0 0 1)InP substrates grown by molecular beam epitaxy (MBE)
002262 (1999) Liquid phase epitaxial growth of AlGaInPAs on GaAs substrates

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