Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Keywords » - entrée « Hall mobility »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
Hall effect device < Hall mobility < Halogen Organic compounds  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 28.
[0-20] [0 - 20][0 - 28][20-27][20-40]
Ident.Authors (with country if any)Title
000027 (2014) High mobility transparent conductive W-doped In2O3 thin films prepared at low substrate temperature and its application to solar cells
000041 (2014) Amorphous indium tin oxide films deposited on flexible substrates by facing target sputtering at room temperature
000286 (2013) Effect of O2 plasma immersion on electrical properties and transistor performance of indium gallium zinc oxide thin films
000317 (2013) Bridgman growth and defect characterization of large diameter mercury indium telluride crystals for near infrared detectors
000770 (2011) Optical and electrical properties of zinc oxide/indium/zinc oxide multilayer structures
000C03 (2010) Effect of ZnO buffer layer on AZO film properties and photovoltaic applications
000C20 (2010) Characterization of single-crystalline In2O3 films deposited on Y-stabilized ZrO2 (100) substrates by MOCVD
000C71 (2009) Transparent conducting Sn-doped Ga1.4In0.6O3 films prepared on α-Al2O3 (0 0 0 1) by MOCVD
000D89 (2009) Optical and electrical characterization of α-InGaZnO thin film fabricated by pulsed laser deposition for thin film transistor applications
000E57 (2009) Formation of p-type ZnMgO thin films by In-N codoping method
000F07 (2009) Effect of annealing on electrical properties of InAsSb films grown on GaAs substrates by molecular beam epitaxy
001029 (2008) Structure and electrical properties of CdIn2O4 thin films prepared by DC reactive magnetron sputtering
001265 (2007) The high mobility InN film grown by MOCVD with GaN buffer layer
001475 (2007) Characteristics of ITO films fabricated on glass substrates by high intensity pulsed ion beam method
001595 (2006) Low temperature step-graded InAlAs/GaAs metamorphic buffer layers grown by molecular beam epitaxy
001676 (2006) Co-electrodeposition and characterization of Cu (In, Ga)Se2 thin films
001708 (2005) The electrical and optical properties of molybdenum-doped indium oxide films grown at room temperature from metallic target
001779 (2005) Magnetron sputtering growth of InAs0.3Sb0.7 films on (100) GaAs substrates : Strong effect of growth conditions on film structure
001878 (2004-06-15) 20 meV-deep donor level in InN film of 0.76 eV band gap grown by plasma-assisted nitrogen source
001C56 (2002-11-15) Growth of High-Quality Epitaxial InN Film with High-Speed Reactant Gas by Organometallic Vapor-Phase Epitaxy
001C77 (2002-07-01) Investigation of transparent and conductive undoped Zn2In2O5-x films deposited on n-type GaN layers

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Chine/Analysis
HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/KwdEn.i -k "Hall mobility" 
HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/KwdEn.i  \
                -Sk "Hall mobility" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Chine/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Chine
   |étape=   Analysis
   |type=    indexItem
   |index=    KwdEn.i
   |clé=    Hall mobility
}}

Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024