Keywords
Analysis
Chine
Racine
Analysis
Chine
Repository
Accueil
Racine
Racine

Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Keywords » - entrée « Hall effect »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
Hall conductivity < Hall effect < Hall effect device  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 80.
[0-20] [0 - 20][0 - 50][20-40]
Ident.Authors (with country if any)Title
000027 (2014) High mobility transparent conductive W-doped In2O3 thin films prepared at low substrate temperature and its application to solar cells
000041 (2014) Amorphous indium tin oxide films deposited on flexible substrates by facing target sputtering at room temperature
000240 (2013) H2 annealing effect on the structural and electrical properties of amorphous InGaZnO films for thin film transistors
000254 (2013) Ferromagnetism in Cr doped In2O3
000281 (2013) Effect of stacking type in precursors on composition, morphology and electrical properties of the CIGS films
000317 (2013) Bridgman growth and defect characterization of large diameter mercury indium telluride crystals for near infrared detectors
000337 (2013) A novel ITO/AZO/SiO2/p-Si frame SIS heterojunction fabricated by magnetron sputtering
000400 (2012) Study of sulphidation of Cu-In nanoparticle precursor films with an air-stable process
000403 (2012) Structural, optical and electrical properties of low-temperature deposition Cu(InxGa1-x)Se2 thin films
000451 (2012) P-type indium oxide thin film for the hole-transporting layer of organic solar cells
000805 (2011) Influence of thermal annealing duration of buffer layer on the crystalline quality of In0.82Ga0.18As grown on InP substrate by LP-MOCVD
000808 (2011) Influence of buffer layer thickness and epilayer's growth temperature on crystalline quality of InAs0.6P0.4/InP grown by LP-MOCVD
000833 (2011) High-Temperature Thermoelectric Properties of Co4Sb12-Based Skutterudites with Multiple Filler Atoms: Ce0.1InxYbyCo4Sb12
000902 (2011) Effects of Annealing on Structural and Electrical Properties of CulnSe2 Thin Films Prepared by Hybrid Sputtering/Evaporation Processes
000907 (2011) Effect of buffer layer annealing temperature on the crystalline quality of In0.82Ga0.18As layers grown by two-step growth method
000995 (2010) The influence of indium surfactant on the electrical properties of GaN epilayers grown by metal-organic chemical vapour deposition
000A65 (2010) Preparation and characterization of Ga2xIn2(1-x)O3 films deposited on ZrO2 (10 0) substrates by MOCVD
000A81 (2010) Optical and electrical properties of In-doped CdO thin films fabricated by pulse laser deposition
000A90 (2010) Mobility enhancement of p-type SnO2 by In-Ga co-doping
000B97 (2010) Effect of substrate temperature on the structural and electrical properties of CIGS films based on the one-stage co-evaporation process
000C01 (2010) Effect of epilayer's growth temperature on crystalline quality of In As0.6P0.4/InP grown by two-step growth method

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Chine/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/KwdEn.i -k "Hall effect" 

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/KwdEn.i  \
                -Sk "Hall effect" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Chine/Analysis/biblio.hfd

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Chine
   |étape=   Analysis
   |type=    indexItem
   |index=    KwdEn.i
   |clé=    Hall effect
}}
Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024