Gallium phosphide < Gallium phosphides < Gallium selenides

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List of bibliographic references

Number of relevant bibliographic references: 75.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
001254 (2007)		Ultrafast all-optical polarization switching based on "virtual excitation" of InGaAs(P) MQWs
001405 (2007)		Equilateral-triangle-resonator injection lasers with directional emission
001495 (2007)		1.3 μm gain coupled DFB laser with InGaAlAs MQW grown on absorptive InGaAsP corrugation
001537 (2006)		Surface and optical properties of AlGaInP films grown on GaAs by metalorganic chemical vapor deposition
001577 (2006)		Optimization of active region for 1.3-μm GaInAsP compressive-strain multiple-quantum-well ridge waveguide laser diodes
001591 (2006)		Monolithic integration of electroabsorption modulator and DFB laser for 10-Gb/s transmission
001614 (2006)		High-quality multiple quantum wells selectively grown with tapered masks by ultra-low-pressure MOCVD
001615 (2006)		High-performance EML grown on taper-masked pattern substrates by ultra-low-pressure MOCVD
001626 (2006)		First-principles studies on the pressure dependences of the stress-strain relationship and elastic stability of semiconductors
001633 (2006)		Experimental study of NRZ format wavelength conversion using electroabsorption modulator
001664 (2006)		Dipole mode photonic crystal point defect laser on InGaAsP/InP
001693 (2006)		A 1.5 μm n-type InGaAsP/InGaAsP modulation-doped multiple quantum well DFB laser by MOCVD
001770 (2005)		Optical properties of digital-alloy In0.49(Ga1-zAlz)0.51P/GaAs and InGaP/In0.49(Ga1-zAlz)0.51P multi-quantum wells grown by molecular-beam epitaxy
001809 (2005)		High power output and temperature characteristics of 1.06μm diode array module
001815 (2005)		GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures
001928 (2004)		The influence of Si-doping to the characteristics of AlGaInP/GaInP multiple quantum wells
001974 (2004)		Optimization of InGaAsP-InP tensile strained multiple quantum-well structures emitting at 1.34 μm
001976 (2004)		Optical properties of highly disordered InGaP by solid-source molecular beam epitaxy with a GaP decomposition source
001985 (2004)		Metamorphosis of InP self-organized islands and the two-dimensional distribution modified by mismatched GaInP buffer layers
001A30 (2004)		Determination of the effective refractive index spectrum of a quantum-well semiconductor laser diode from the measured modal gain spectrum
001B27 (2003)		Thermodynamic analysis on MOVPE growth of Ga1-xInxP semiconductor

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