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Serveur d'exploration sur l'Indium - Analysis (Chine)

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Gallium compound < Gallium compounds < Gallium fluorides  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 161.
[0-20] [0 - 20][0 - 50][20-40]
Ident.Authors (with country if any)Title
000308 (2013) Compositionally undulating step-graded InAsyP1-y buffer layer growth by metal-organic chemical vapor deposition
001872 (2004-06-28) Investigations on V-defects in quaternary AlInGaN epilayers
001873 (2004-06-28) Improvements of InGaN/GaN quantum-well interfaces and radiative efficiency with InN interfacial layers
001876 (2004-06-21) Luminescence efficiency of InGaN multiple-quantum-well ultraviolet light-emitting diodes
001879 (2004-06-07) Ultrafast valence intersubband hole relaxation in InGaN multiple-quantum-well laser diodes
001884 (2004-05-15) Cluster size and composition variations in yellow and red light-emitting InGaN thin films upon thermal annealing
001885 (2004-05-10) Indium-assisted synthesis on GaN nanotubes
001889 (2004-05) Study of AlGaInP multiquantum-well/double heterostructure light-emitting diodes with In-added GaP window layer regrown by antimony-based liquid phase epitaxy
001890 (2004-05) InGaN/AlGaN near-ultraviolet multiple quantum well light-emitting diodes with p-InGaN tunneling contact layer
001891 (2004-05) Growth of InGaN self-assembled quantum dots and their application to photodiodes
001893 (2004-05) Characterization of Large-Area AlGaInP/Mirror/Si Light-Emitting Diodes Fabricated by Wafer Bonding
001896 (2004-04-05) On the origin of spin loss in GaMnN/InGaN light-emitting diodes
001897 (2004-04-05) Observation of coherent interfacial optical phonons in GaInP/GaAs/GaInP single quantum wells
001898 (2004-04-05) Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions
001900 (2004-04) InGaN/GaN Multi-Quantum Well Metal-Insulator Semiconductor Photodetectors with Photo-CVD SiO2 Layers
001901 (2004-04) InGaN/GaN Light Emitting Diodes with a Lateral Current Blocking Structure
001903 (2004-03-29) Mapping of multiple-quantum-well layers and structure of V defects in InGaN/GaN diodes
001904 (2004-03-29) Interpretation of anomalous temperature dependence of anti-Stokes photoluminescence at GaInP2/GaAs interface
001905 (2004-03-15) Landau level structures and semimetal-semiconductor transition in strained InAs/GaSb quantum wells
001906 (2004-03-15) High-power AlGaInP light-emitting diodes with metal substrates fabricated by wafer bonding
001907 (2004-03-15) Dynamical conductance through InAs/GaSb/InAs and InAs/AlSb/GaSb/AlSb/InAs structures

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