Gallium alloys < Gallium antimonides < Gallium arsenides

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List of bibliographic references

Number of relevant bibliographic references: 57.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000217 (2013)		InAs/GaSb type-II superlattice mid-wavelength infrared focal plane array detectors grown by molecular beam epitaxy
000269 (2013)		Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy
000358 (2012)		Two-colour mid-infrared absorption in InAs/GaSb type II and broken-gap quantum wells under gated electric field
000515 (2012)		Heteroepitaxial Growth of GaSb Nanotrees with an Ultra-Low Reflectivity in a Broad Spectral Range
000576 (2012)		Effect of growth temperature on surface morphology and structure of InAs/GaSb superlattices grown by metalorganic chemical vapor deposition
000802 (2011)		Interface effect on the electronic structure and optical properties of InAs/GaSb superlattices
000863 (2011)		Extrinsic Base Surface Passivation in Terahertz GaAsSb/InP DHBTs Using InGaAsP Ledge Structures
000C35 (2010)		Ab initio study of electronic structures of InAs and GaSb nanowires along various crystallographic orientations
000E48 (2009)		Growth of InAs/GaSb type-II superlattices by gas-source molecular-beam epitaxy
000F89 (2008)		Two-colour infrared absorption in InAs/GaSb-based type II and broken-gap quantum well systems
001160 (2008)		Electronic subband structure of InAs/GaSb-based type II and broken-gap quantum well systems
001256 (2007)		Two-colour mid-infrared absorption in an InAs/GaSb-based type II and broken-gap quantum well
001291 (2007)		Sub-terahertz photoconduction induced by interlayer transition in an InAs/GaSb-based type II and broken-gap quantum well system
001360 (2007)		MBE growth of very short period InAs/GaSb type-II superlattices on (0 0 1)GaAs substrates
001479 (2007)		Buffer influence on AlSb/InAs/AlSb quantum wells
001776 (2005)		Molecular beam epitaxy growth and photoluminescence study of room temperature 1.31 μm (InyGa1-yAs/GaAs1-xSbx)/GaAs bilayer quantum wells
001810 (2005)		Heat management of MBE-grown antimonide lasers
001859 (2005)		Ab initio molecular-dynamics simulations of liquid GaSb and InSb
001A31 (2004)		Design of a resonant-cavity-enhanced GaInAsSb/GaSb photodetector
001B30 (2003)		The effects of (NH4)2S passivation treatments on the dark current-voltage characteristics of InGaAsSb PIN detectors
001B32 (2003)		TDHF-SOS treatments on linear and nonlinear optical properties of III-V semiconductor clusters (Ga3As3, Ga3Sb3, In3P3, In3As3, In3Sb3)

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