Gallium Indium Arsenides phosphides Mixed < Gallium Indium Nitrides Mixed < Gallium Indium Oxides Mixed

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List of bibliographic references

Number of relevant bibliographic references: 22.
[0-20] [0 - 20][0 - 22][20-21][20-40]

Ident.	Authors (with country if any)	Title
000072 (2013)		Theoretical simulations of InGaN/Si mechanically stacked two-junction solar cell
000083 (2013)		Ternary mixed crystal effects on electron-interface optical phonon interactions in InxGa1-xN/GaN quantum wells
000175 (2013)		Model for the formation energy of In-N clusters and their effect on the energy band gap of the Ga-rich and As-rich InxGa1-xNyAs1-y semiconductor alloys
000253 (2013)		First principles calculations for band-gap energy properties of non-polar and semi-polar ternary nitride alloys under in-plane strain
000419 (2012)		Self-consistent simulation of carrier confinement characteristics in (AlyGa1-yN/AlN)SLs/GaN/(InxGa1-xN/GaN)MQW/GaN heterostructures
000446 (2012)		Phonon and electron-hole plasma effects on binding energies of excitons in wurtzite GaN/InxGa1-xN quantum wells
000530 (2012)		Finite barrier width effects on exciton states and optical properties in wurtzite InGaN/GaN quantum well
000543 (2012)		Enhancement of light-emission efficiency of ultraviolet InGaN/GaN multiple quantum well light emitting diode with InGaN underlying layer
000581 (2012)		Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition
000665 (2011)		Theoretical study on InxGa1-xN/GaN quantum dots solar cell
000744 (2011)		Polaronic Effect on the Electron Energy Spectrum in a Wurtzite InxGa1-xN/GaN Quantum Well
000825 (2011)		Improving color rendering of Y3Al5O12:Ce3+ white light-emitting diodes based on dual-blue-emitting active layers
000865 (2011)		Exciton states and optical transitions in InGaN/GaN quantum dot nanowire heterostructures: Strong built-in electric field and dielectric mismatch effects
000898 (2011)		Effects of reflector-induced interferences on light extraction of InGaN/GaN vertical light emitting diodes
000B11 (2010)		Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties
000B58 (2010)		External electric field effect on the hydrogenic donor impurity in zinc-blende InGaN/GaN cylindrical quantum well wire
000B74 (2010)		Electron localization and emission mechanism in wurtzite (Al, In, Ga)N alloys
000C06 (2010)		Donor impurity states in zinc-blende InGaN/GaN asymmetric coupled quantum dots: Hydrostatic pressure effect
000C82 (2009)		The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers
000E56 (2009)		Giant magnetocurrent in triple-barrier ferromagnetic resonant-tunneling diode with different magnetization configurations
000F46 (2009)		CVD growth of InGaN nanowires

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