Gallium Indium Arsenides Antimonides < Gallium Indium Arsenides Mixed < Gallium Indium Arsenides phosphides Mixed

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List of bibliographic references

Number of relevant bibliographic references: 44.
[0-20] [0 - 20][0 - 44][20-40]

Ident.	Authors (with country if any)	Title
000341 (2013)		A model for the spectral blueshift caused by the In-N clusters in InxGa1-xNyAs1-y (x < 0.4 and y≤0.04) after annealing
000619 (2012)		Anomalous spin-orbit coupling in high-density two-dimensional electron gas confined in InGaAs/InAlAs quantum well
000710 (2011)		Strain accumulation in InAs/InxGai1-xAs quantum dots
000711 (2011)		Strain accumulation in InAs/InxGa1-xAs quantum dots
000733 (2011)		Probing into the effect of Auger recombination mechanism on zero bias resistance-area product in In1-xGaxAs detector
000762 (2011)		Optically mediated spin current and Fano resonance in an Aharonov-Bohm ring with a quantum dot
000808 (2011)		Influence of buffer layer thickness and epilayer's growth temperature on crystalline quality of InAs0.6P0.4/InP grown by LP-MOCVD
000907 (2011)		Effect of buffer layer annealing temperature on the crystalline quality of In0.82Ga0.18As layers grown by two-step growth method
000B17 (2010)		Integration of GaAs /In0.1Ga0.9As/AlAs resonance tunneling heterostructures into micro-electro-mechanical systems for sensor applications
000B42 (2010)		Gate-controlled electron-electron interactions in an In0.53Ga0.47As/InP quantum well structure
000C52 (2010)		1.3 μm InAs/GaAs quantum dots with broad emission spectra
000F05 (2009)		Effect of buffer thickness on properties of In0.8Ga0.2As/InP with two-step growth technique
000F34 (2009)		Critical lateral dimension for a nanoscale-patterned heterostructure using the finite element method
001066 (2008)		Phonon-induced decoherence of spin-orbit-driven coherent oscillations in a single InGaAs quantum dot
002787 (1994)		Pressure dependence of photoluminescence in InxGa1-xAs/AlyGai1-yAs strained quantum wells with different widths
002821 (1993)		Reflection electron imaging of semiconductor multilayer materials
002839 (1993)		Analysis of double heterojunction bipolar transistor with heavily doped p+-GaAs/InxGa1-xAs strained-layer superlattice base
002840 (1993)		A tristate switching device with double delta-doped quantum well structure
002843 (1993)		A REM study of inhomogeneous stress fields induced by the interfacial steps at In0.2Ga0.8As/GaAs interface
002845 (1992)		n-AlGaAs/InGaAs/n-GaAs double-modulation doped pseudomorphic HMET with MIS structure
002848 (1992)		The interaction of interface optical phonons with an electron in an asymmetric quantum well

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