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GSMBE < GSMBE method < GaInAsP-InP  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 32.
[0-20] [0 - 20][0 - 32][20-31][20-40]
Ident.Authors (with country if any)Title
000078 (2013) The effects of injector doping densities on lasing properties of InP-based quantum cascade lasers at 4.3 μm
000213 (2013) InP/InGaAs/InP DHBT structures with high carbon-doped base grown by gas source molecular beam epitaxy
000242 (2013) Growth of metamorphic InGaP layers on GaAs substrates
000274 (2013) Effects of growth temperature and buffer scheme on characteristics of InP-based metamorphic InGaAs photodetectors
000378 (2012) Temperature dependent lasing characteristics of InAs/InP(100) quantum dot laser
000463 (2012) Morphology and shape dependent characteristics of InAs/InP(100) quantum dot laser grown by gas source molecular beam epitaxy
000682 (2011) The I-V characteristics of InAs/GaAs quantum dot laser
000730 (2011) Quantum dot lasers grown by gas source molecular-beam epitaxy
000811 (2011) InP/InGaAs/InP DHBT structures with graded composition base grown by gas source molecular beam epitaxy
000B26 (2010) InAs/GaAs quantum dot lasers grown by gas-source molecular-beam epitaxy
000D67 (2009) Precise growth control and characterization of strained AlInAs and GaInAs for quantum cascade lasers by GSMBE
000D81 (2009) Performance of gas source MBE-grown wavelength-extended InGaAs photodetectors with different buffer structures
000D84 (2009) Optimization of AlInGaAs/InGaAs/InAs strain compensated triangular quantum wells grown by gas source molecular beam epitaxy for laser applications in 2.1-2.4 μm range
000E48 (2009) Growth of InAs/GaSb type-II superlattices by gas-source molecular-beam epitaxy
001388 (2007) Heavily carbon-doped p-type InGaAs grown by gas source molecular beam epitaxy for application to heterojunction bipolar transistors
001684 (2006) Band gap blue shift of InGaAs/InP multiple quantum wells by different dielectric film coating and annealing
001709 (2005) The effect of the AlxGa1-xN/AIN buffer layer on the properties of GaN/Si(111) film grown by NH3-MBE
001784 (2005) Low threshold distribution feedback quantum cascade lasers at 7.6μm grown by gas source molecular beam epitaxy
001815 (2005) GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures
001842 (2005) Continuous-wave operation quantum cascade lasers at 7.95 μm
001B95 (2003) High-performance enhancement-mode pseudomorphic InGaP/InGaAs/GaAs HEMT structures by gas source molecular beam epitaxy

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