Keywords
Analysis
Chine
Racine
Analysis
Chine
Repository
Accueil
Racine
Racine

Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Keywords » - entrée « Field effect transistors »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
Field effect transistor < Field effect transistors < Field electron microscopy  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 12.
Ident.Authors (with country if any)Title
000122 (2013) Rational Design of Sub-Parts per Million Specific Gas Sensors Array Based on Metal Nanoparticles Decorated Nanowire Enhancement-Mode Transistors
001513 (2006) Theoretical study of improved two-dimensional electron gas density in AlGaN/GaN/AlGaN double heterostructure
001911 (2004-03) Study of InGaP/InGaAs double delta-doped channel heterostructure field-effect transistors
001D03 (2002-02-01) ZnMgSSe Metal-Semiconductor-Metal Visible-Blind Photodetectors with Transparent Indium-Tin-Oxide Contact Electrodes
001E74 (2001-01-15) Temperature Dependence of Gate Current and Breakdown Behaviors in an n+-GaAs/p+-InGaP/n--GaAs High-Barrier Gate Field-Effect Transistor
001E75 (2001-01-15) An Improved In0.34Al0.66As0.85Sb0.15/InP Heterostructure Utilizing Coupled δ-Doping InP Channel
002017 (2000-05-22) In0.34Al0.66As0.85Sb0.15/δ(n+)-InP heterostructure field-effect transistors
002649 (1995-07-17) Observation of the anomalous current-voltage characteristics of GaAs/n+-InGaAs/GaAs doped-channel structure
002663 (1995-05-22) Characteristics of a δ -doped GaAs/InGaAs p-channel heterostructure field-effect transistor
002667 (1995-05-08) Molecular beam epitaxy regrowth using a thin In layer for surface passivation
002673 (1995-03-20) Performance enhancement in a metal-insulator-semiconductor-like pseudomorphic transistor by utilizing an n--GaAs/n+-In0.2Ga0.8As two-layer structure
002751 (1994-08-01) Enhancement of electron transfer and negative differential resistance in GaAs-based real-space transfer devices by using strained InGaAs channel layers

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Chine/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/KwdEn.i -k "Field effect transistors" 

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/KwdEn.i  \
                -Sk "Field effect transistors" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Chine/Analysis/biblio.hfd

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Chine
   |étape=   Analysis
   |type=    indexItem
   |index=    KwdEn.i
   |clé=    Field effect transistors
}}
Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024