Epitaxial growth < Epitaxial layers < Epitaxy

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 126.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000125 (2013)		Pulsed laser deposition and characterization of epitaxial CuInS2 thin films on c-plane sapphire substrates
000147 (2013)		Physical Mechanism of Surface Roughening of the Radial Ge-Core/Si-Shell Nanowire Heterostructure and Thermodynamic Prediction of Surface Stability of the InAs-Core/GaAs-Shell Nanowire Structure
000308 (2013)		Compositionally undulating step-graded InAsyP1-y buffer layer growth by metal-organic chemical vapor deposition
000440 (2012)		Plasmonic Nanolaser Using Epitaxially Grown Silver Film
000441 (2012)		Plasma frequency and dielectric function dependence on doping and temperature for p-type indium phosphide epitaxial films
000448 (2012)		Phase Selection Enabled Formation of Abrupt Axial Heterojunctions in Branched Oxide Nanowires
000515 (2012)		Heteroepitaxial Growth of GaSb Nanotrees with an Ultra-Low Reflectivity in a Broad Spectral Range
000518 (2012)		Growth of a-plane GaN on r-plane sapphire by self-patterned nanoscale epitaxial lateral overgrowth
000600 (2012)		Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD)
000652 (2011)		Unusual resistive switching induced by voltage in La0.7Sr0.3MnO3 thin films
000683 (2011)		Tetragonal distortion of InAsPSb film grown on InAs substrate studied by Rutherford backscattering/channeling and synchrotron X-ray diffraction
000708 (2011)		Structural and optical properties of Ga2O3:In films deposited on MgO (1 0 0) substrates by MOCVD
000808 (2011)		Influence of buffer layer thickness and epilayer's growth temperature on crystalline quality of InAs0.6P0.4/InP grown by LP-MOCVD
000824 (2011)		Improvement of structural and electrical properties of Cu2O films with InN epilayers
000827 (2011)		Hot-electron induced degradations in GaN-based LEDs fabricated on nanoscale epitaxial lateral overgrown layers
000866 (2011)		Epitaxial Growth of High Quality Nonpolar InN Films on LiGaO2 Substrates
000907 (2011)		Effect of buffer layer annealing temperature on the crystalline quality of In0.82Ga0.18As layers grown by two-step growth method
000915 (2011)		Domain structure and optical property of epitaxial indium oxide film deposited on MgO(100) substrate
000995 (2010)		The influence of indium surfactant on the electrical properties of GaN epilayers grown by metal-organic chemical vapour deposition
000A55 (2010)		Recent advances and challenges for successfu p-type control of InN films with Mg acceptor doping by molecular beam epitaxy
000A56 (2010)		Rapid growth and characterization of InN nanocolumns on InGaN buffer layers at a low ratio of N/In

---

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Chine/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/KwdEn.i -k "Epitaxial layers" 

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/KwdEn.i  \
                -Sk "Epitaxial layers" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Chine/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Chine
   |étape=   Analysis
   |type=    indexItem
   |index=    KwdEn.i
   |clé=    Epitaxial layers
}}

---

This area was generated with Dilib version V0.5.77. Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024