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Serveur d'exploration sur l'Indium - Analysis (Chine)

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Energy-level splitting < Energy-level transitions < Engraving  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 25.
[0-20] [0 - 20][0 - 25][20-24][20-40]
Ident.Authors (with country if any)Title
000089 (2013) Synthesis and relative optical properties of Eu3+/Tb3+-activated Li3InB2O6
000444 (2012) Photoluminescence characterization of a novel red-emitting phosphor In2(MoO4)3:Eu3+ for white light emitting diodes
000567 (2012) Effects of p-type doping on the optical properties of InAs/GaAs quantum dots
000A86 (2010) New promising phosphors Ba3InB9O18 activated by Eu3+/Tb3+
000E83 (2009) Energy band calculation of amorphous indium tin oxide films on polyethylene terephthalate substrate with indirect transition
001061 (2008) Polarization dependence of absorption in strongly vertically coupled InAs/GaAs quantum dots for two-color far-infrared photodetector
001078 (2008) Optical transitions of InAs/In0.36Ga0.64As/GaAs(311B) surface quantum dots clearly identified by the piezoreflectance technique
001260 (2007) The state filling effect in p-doped InGaAs/GaAs quantum dots
001351 (2007) Multiple confined-state transitions within surface quantum dots by a piezomodulation reflectance study
001415 (2007) Energy band alignment of an In2O3: Mo/Si heterostructure
001B51 (2003) Role of different cap layers tuning the wavelength of self-assembled InAs/GaAs quantum dots
001C25 (2003) Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs
001D62 (2002) Influence of combined InAlAs and InGaAs strain-reducing laser on luminescence properties of InAs/GaAs quantum dots
001F20 (2001) Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures
002139 (2000) An investigation of the optical spectra and EPR parameters of vanadium in III-V semiconductors (GaAs, GaP, InP)
002361 (1998) Pressure behaviour of photoluminescence from InAs submonolayer in GaAs matrix
002513 (1997) GSMBE growth and characterization of InxGa1-xAs/InP strained-layer MQWs in a P-i-N Configuration
002597 (1996) Photoluminescence studies of CuInSe2
002602 (1996) Optical properties of quaternary GaInAsSb/AlGaAsSb strained quantum wells
002690 (1995-01-01) Electric-field dependence of optical absorption properties in coupled quantum wells and their application to 1.3 μm optical modulator
002703 (1995) Photomodulated transmission spectroscopy of InxGa1-xAs/GaAs MQWs under hydrostatic pressure

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