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Serveur d'exploration sur l'Indium - Analysis (Chine)

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Electron delocalization < Electron density < Electron device manufacture  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 16.
Ident.Authors (with country if any)Title
000244 (2013) Growth and large-scale assembly of InAs/InP core/shell nanowire: effect of shell thickness on electrical characteristics
000352 (2012) Wetting layers effect on InAs/GaAs quantum dots
000892 (2011) Electrical and Photosensitive Characteristics of a-IGZO TFTs Related to Oxygen Vacancy
000945 (2011) Annealing effects of In2O3 thin films on electrical properties and application in thin film transistors
000F32 (2009) Current-induced spin polarization for a general two-dimensional electron system
001003 (2008) The effect of electrical properties for InGaN and InN by high-energy particle irradiation
001421 (2007) Electron-density dependence of longitudinal-optical phonon lifetime in InN studied by subpicosecond time-resolved Raman spectroscopy
001701 (2005) Time-dependent transport properties in quantum well with thin inserted layer
001D08 (2002-01-15) Low-Voltage-Operation High-Power-Density AlGaAs/InGaAs Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistor for Personal Handy-Phone Handset Application
001E29 (2001-09-17) Subband electron properties of highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substrates
001E45 (2001-06-04) Etching trenches to effectively create electron quantum wires for single-electron-transistor applications
001E79 (2001) Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure
002558 (1996-08-15) Photoinduced electron coupling in δ-doped GaAs/In0.18Ga0.82As quantum wells
002749 (1994-08-15) Electronic properties of AlxGa1-xSb/InAs quantum wells
002756 (1994-07-15) Negative persistent photoeffect on cyclotron resonance in InAs/Al0.5Ga0.5Sb quantum wells
002773 (1994-01) Influences of δ -doping time and spacer thickness on the mobility and two-dimensional electron gas concentration in δ -doped GaAs/InGaAs/GaAs pseudomorphic heterostructures

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