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Serveur d'exploration sur l'Indium - Analysis (Chine)

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Electric admittance < Electric breakdown < Electric conductance  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 7.
Ident.Authors (with country if any)Title
001E74 (2001-01-15) Temperature Dependence of Gate Current and Breakdown Behaviors in an n+-GaAs/p+-InGaP/n--GaAs High-Barrier Gate Field-Effect Transistor
001F96 (2000-10-15) High-Temperature Breakdown Characteristics of δ-Doped In0.49Ga0.51P/GaAs/In0.25Ga0.75As/AlGaAs High Electron Mobility Transistor
002156 (1999-11-29) Low-leakage current and high-breakdown voltage GaAs-based heterostructure field-effect transistor with In0.5(Al0.66Ga0.34)0.5P Schottky layer
002166 (1999-10) Investigation of low-temperature deposition of silicon dioxide on indium phosphide by liquid phase deposition
002305 (1998-09-07) Application of δ-doped wide-gap collector structure for high-breakdown and low-offset voltage transistors
002613 (1996) Improved performance of InAlAs-InGaAs-InP MSM photodetectors with graded superlattice structure grown by gas source MBE
002845 (1992) n-AlGaAs/InGaAs/n-GaAs double-modulation doped pseudomorphic HMET with MIS structure

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