Effective interaction < Effective mass < Effective mass model

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 39.
[0-20] [0 - 20][0 - 39][20-38][20-40]

Ident.	Authors (with country if any)	Title
000235 (2013)		Highly Responsive Ultrathin GaS Nanosheet Photodetectors on Rigid and Flexible Substrates
000237 (2013)		High temperature thermoelectric and magnetic properties of InxNdyCo4Sb12 skutterudites
000441 (2012)		Plasma frequency and dielectric function dependence on doping and temperature for p-type indium phosphide epitaxial films
000713 (2011)		Spin splitting modulated by uniaxial stress in InAs nanowires
000B32 (2010)		Hydrogenic impurity states in zinc-blende symmetric InGaN/GaN multiple quantum dots
000B58 (2010)		External electric field effect on the hydrogenic donor impurity in zinc-blende InGaN/GaN cylindrical quantum well wire
000C35 (2010)		Ab initio study of electronic structures of InAs and GaSb nanowires along various crystallographic orientations
000E61 (2009)		First principles study on the properties of p-type conducting In:SnO2
000E87 (2009)		Electronic structure of quantum dots in (111) direction
000E90 (2009)		Electron and hole effective masses in self-assembled quantum dots
001050 (2008)		Pseudo-potential band structure calculation of InSb ultra-thin films and its application to assess the n-metal-oxide-semiconductor transistor performance
001382 (2007)		Hole Rashba effect and g-factor in InP1 nanowires
001389 (2007)		Growth, structure and electrical properties of mercury indium telluride single crystals
001481 (2007)		Atomistic approach to thickness-dependent bandstructure calculation of InSb UTB
001963 (2004)		Relatively large electric-field induced electron drift velocity observed in an InxGa1-xAs-based p-i-n semiconductor nanostructure
001A55 (2003-12-15)		Electronic properties of GaAs/GayIn1-yNxAs1-y-xSby superlattices
001A79 (2003-08-18)		Large electric-field induced electron drift velocity observed in an InxGa1-xAs-based p-i-n semiconductor nanostructure at T=300 K
001B17 (2003-01-15)		Forbidden transitions and the effective masses of electrons and holes in In1-xGaxAs/InP quantum wells with compressive strain
001C03 (2003)		GalnNAs: Growth and characterization
001C14 (2003)		Electronic properties of III-V semiconductor heterostructures
001D02 (2002-02-04)		Nitrogen-induced enhancement of the electron effective mass in InNxAs1-x

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