Serveur d'exploration sur l'Indium - Analysis (Chine)

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Defect recombination < Defect states < Defect structure  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 39.
[0-20] [0 - 20][0 - 39][20-38][20-40]
Ident.Authors (with country if any)Title
000324 (2013) Analysis of Nonradiative Carrier Recombination Processes in InN Films by Mid-infrared Spectroscopy
000405 (2012) Structural and optical studies of ZnS nanocrystal films prepared by sulfosalicylic acid (C7H6O6S)-assisted galvanostatic deposition with subsequent annealing
000439 (2012) Positron annihilation study on CuInSe2 solar cell thin films
000583 (2012) Effect of Cerium Doping in the TiO2 Photoanode on the Electron Transport of Dye-Sensitized Solar Cells
000868 (2011) Enhanced optical properties of InAs/GaAs quantum dots grown by radio-frequency hydrogen plasma-assisted molecular beam epitaxy
000B58 (2010) External electric field effect on the hydrogenic donor impurity in zinc-blende InGaN/GaN cylindrical quantum well wire
000C06 (2010) Donor impurity states in zinc-blende InGaN/GaN asymmetric coupled quantum dots: Hydrostatic pressure effect
000C17 (2010) Correlation between the 3.31-eV emission and the doping level in indium-doped ZnO nanostructures
000D21 (2009) Study on temperature dependent resistivity of indium-doped cadmium zinc telluride
000D46 (2009) Roles of sodium induced defects in CuInSe2 by first principles calculation
000D90 (2009) Ohmic contact and space-charge-limited current in molybdenum oxide modified devices
000E17 (2009) Ir(ppy)3 phosphorescent microrods and nanowires : promising micro-phosphors
001005 (2008) The defect density of a SiNx /In0.53Ga0.47As interface passivated using (NH4)2Sx
001224 (2008) Annihilation of deep level defects in InP through high temperature annealing
001277 (2007) Temperature-dependent photoluminescence of undoped, N-doped and N-in codoped ZnO thin films
001644 (2006) Electron irradiation-induced defects in InP pre-annealed at high temperature
001903 (2004-03-29) Mapping of multiple-quantum-well layers and structure of V defects in InGaN/GaN diodes
001931 (2004) The electrical properties and the interfaces of CU2O/ZnO/ITO p-i-n heterojunction
001A59 (2003-11-15) Electron-beam-induced current and cathodoluminescence characterization of InGaAs strain-balanced multiquantum well photovoltaic cells
001B08 (2003-03-03) Strong green luminescence in quaternary InAlGaN thin films
001C95 (2002-04) Fe-Diffusion-Induced Defects in InP Annealed in Iron Phosphide Ambient

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