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Serveur d'exploration sur l'Indium - Analysis (Chine)

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Dark conductivity < Dark current < Dark current density  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 19.
Ident.Authors (with country if any)Title
000004 (2014) The influence of perpendicular transport behavior on the properties of n-i-p type amorphous silicon solar cells
000020 (2014) Interface layer control and optimization of InAs/GaSb type-II superlattices grown by molecular beam epitaxy
000217 (2013) InAs/GaSb type-II superlattice mid-wavelength infrared focal plane array detectors grown by molecular beam epitaxy
000371 (2012) The experimental investigation on dark current for InGaAs-InP avalanche photodiodes
000740 (2011) Preparation and properties of Ni/InGaN/GaN Schottky barrier photovoltaic cells
000906 (2011) Effect of built-in electric field in photovoltaic InAs quantum dot embedded GaAs solar cell
000A42 (2010) Solution-processed hybrid bilayer photodetectors with rapid response to ultraviolet radiation
000D81 (2009) Performance of gas source MBE-grown wavelength-extended InGaAs photodetectors with different buffer structures
000E96 (2009) Electrical and Photoresponse Properties of an Intramolecular p-n Homojunction in Single Phosphorus-Doped ZnO Nanowires
000F74 (2009) A Back-Illuminated Vertical-Structure Ultraviolet Photodetector Based on an RF-Sputtered ZnO Film
001624 (2006) Gas source MBE grown wavelength extended 2.2 and 2.5 μm InGaAs PIN photodetectors
001786 (2005) Investigation on the performances of multi-quantum barriers in a single quantum well solar cell : Photovoltaic materials and phenoma
001808 (2005) High-performance InP-based resonant cavity enhanced photodetector based on InP/air-gap Bragg reflectors
001B30 (2003) The effects of (NH4)2S passivation treatments on the dark current-voltage characteristics of InGaAsSb PIN detectors
001F25 (2001) Mid-infrared GaInAsSb photodetector grown by solid source molecular beam epitaxy
002719 (1995) GaInAsSb/GaSb infrared photodetectors prepared by MOCVD
002855 (1992) Studies on aluminum/Poly(3-octylthiophene)/indium-tin oxide Schottky barrier electronic device : rectification property and its temperature dependence
002871 (1992) High-performance undoped InP/n-In0.53Ga0.47As MSM photodetectors grown by LP-MOVPE
002874 (1992) Evaluation of low dark current InSb photovoltaic detectors

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