Crystal growth from solutions < Crystal growth from vapors < Crystal growth habit

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 154.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000448 (2012)		Phase Selection Enabled Formation of Abrupt Axial Heterojunctions in Branched Oxide Nanowires
000B27 (2010)		In2O3 nanorod arrays grown at grain-boundary triple junctions of Cu-Sn alloy substrate
001136 (2008)		Growth and characterization of the InN film ammonification technique
001255 (2007)		Two-step growth of ZnO films with high conductivity and high roughness
001358 (2007)		Metamorphic growth of 1.25-1.29 μm InGaAs quantum well lasers on GaAs by molecular beam epitaxy
001366 (2007)		Large-scale CVD synthesis of nitrogen-doped multi-walled carbon nanotubes with controllable nitrogen content on a CoxMg1- xMoO4 catalyst
001370 (2007)		Initial stages of the cubic-InN growth with the technique of the pre-deposition of indium
001388 (2007)		Heavily carbon-doped p-type InGaAs grown by gas source molecular beam epitaxy for application to heterojunction bipolar transistors
001507 (2006)		Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots
001516 (2006)		The superconductivity in boron-doped polycrystalline diamond thick films
001518 (2006)		The role of Sb in the molecular beam epitaxy growth of 1.30-1.55 μm wavelength GaInNAs/GaAs quantum well with high indium content
001537 (2006)		Surface and optical properties of AlGaInP films grown on GaAs by metalorganic chemical vapor deposition
001542 (2006)		Structure, electrical and optical properties of N-In codoped ZnO thin films prepared by ion-beam enhanced deposition method
001547 (2006)		Structural and optical properties of violet InGaN/AlInGaN light-emitting diodes grown by MOCVD
001571 (2006)		Photoluminescence characteristics of low indium composition InGaN thin films grown on sapphire by metalorganic chemical vapor deposition
001577 (2006)		Optimization of active region for 1.3-μm GaInAsP compressive-strain multiple-quantum-well ridge waveguide laser diodes
001579 (2006)		Optical properties of self-assembled InAs/InAlAs/InP quantum wires with different InAs deposited thickness
001580 (2006)		Optical properties of InN films grown by molecular beam epitaxy at different conditions
001610 (2006)		Improved quality of InGaN/GaN multiple quantum wells by a strain relief layer
001621 (2006)		Growth of InAs quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition and their optical properties
001622 (2006)		Growth of In2O3 single-crystalline film on sapphire (0001) substrate by molecular beam epitaxy

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