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Serveur d'exploration sur l'Indium - Analysis (Chine)

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Compression strength < Compressive stress < Computer aided analysis  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 14.
Ident.Authors (with country if any)Title
000253 (2013) First principles calculations for band-gap energy properties of non-polar and semi-polar ternary nitride alloys under in-plane strain
000B11 (2010) Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties
000D33 (2009) Strain effect on polarized optical properties of c-plane GaN and m-plane GaN
001186 (2008) Effect of buffer layer thickness and epilayer growth temperature on crystalline quality of InAs0.9Sb0.1 grown by MOCVD
001512 (2006) Theoretical study of phase separation in wurtzite InGaN
001513 (2006) Theoretical study of improved two-dimensional electron gas density in AlGaN/GaN/AlGaN double heterostructure
001577 (2006) Optimization of active region for 1.3-μm GaInAsP compressive-strain multiple-quantum-well ridge waveguide laser diodes
001674 (2006) Crack control in GaN grown on silicon (111) using in doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition
001971 (2004) Photoluminescence from InGaN/GaN MQWs on sapphire and membranes fabricated by laser lift-off
001988 (2004) MOVPE growth and fabrication of 1.3 μm high power InGaAsP-InP polarization-insensitive superluminescent diodes with complex strained quantum wells
001A06 (2004) High power polarization-insensitive 1.3 μm InGaAsP-InP quantum-well superluminescent emission diodes grown by MOVPE
001D41 (2002) Raman study of InAs quantum dots on GaAs/InP grown by low pressure metal-organic chemical vapor deposition
001F62 (2001) Design of the active structure of high-performance 1.55-μm In1-x-yGayAlxAs strained MQW lasers
002062 (2000) Study of AlGaAsSb/InGaAsSb strained quantum well grown by molecular beam epitaxy on GaSb(100)

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