Serveur d'exploration sur l'Indium - Analysis (Chine)

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Chemical bath deposition < Chemical beam epitaxy < Chemical bond  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 10.
Ident.Authors (with country if any)Title
000515 (2012) Heteroepitaxial Growth of GaSb Nanotrees with an Ultra-Low Reflectivity in a Broad Spectral Range
001388 (2007) Heavily carbon-doped p-type InGaAs grown by gas source molecular beam epitaxy for application to heterojunction bipolar transistors
001A89 (2003-06-23) Effect of InGaAs capping layer on the properties of InAs/InGaAs quantum dots and lasers
001E14 (2001-12-15) Optical properties of as-grown and annealed InAs(N)/InGaAsP strained multiple quantum wells
001E78 (2001-01) Growth of InAsN/InGaAs(P) quantum wells on InP by gas source molecular beam epitaxy
002170 (1999-09) Growth and postgrowth rapid thermal annealing of InAsN/InGaAs single quantum well on InP grown by gas source molecular beam epitaxy
002197 (1999-02-15) Ga0.51In0.49P/InxGa1-xAs/GaAs lattice-matched and strained doped-channel field-effect transistors grown by gas source molecular beam epitaxy
002313 (1998-06-15) Photoluminescence investigation of GaInP/GaAs multiple quantum wells grown on (001) and (311) B GaAs surfaces by gas source molecular beam epitaxy
002315 (1998-06-01) High resolution x-ray diffraction study of Bragg peak width in strained InGaAs/InAlAs/InP heterostructures
002462 (1997-05) Gas source molecular beam epitaxy growth of high quality InGaAsP for 0.98 μm Al-free InGaAs/InGaAsP/InGaP laser diodes

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