Binding capacity < Binding energy < Binding site

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 28.
[0-20] [0 - 20][0 - 28][20-27][20-40]

Ident.	Authors (with country if any)	Title
000318 (2013)		Bonding to antibonding transition for hole ground states in coupled InAs quantum wires
000446 (2012)		Phonon and electron-hole plasma effects on binding energies of excitons in wurtzite GaN/InxGa1-xN quantum wells
000450 (2012)		Particle Size and Structural Control of ZnWO4 Nanocrystals via Sn2+ Doping for Tunable Optical and Visible Photocatalytic Properties
000530 (2012)		Finite barrier width effects on exciton states and optical properties in wurtzite InGaN/GaN quantum well
000545 (2012)		Enhanced performance of organic electroluminescent diodes by UV-ozone treatment of molybdenum trioxide
000597 (2012)		Crystal structure and bonding characteristics of In-doped β-Zn4Sb3
000631 (2012)		Ag/ZnO flower heterostructures as a visible-light driven photocatalyst via surface plasmon resonance
000865 (2011)		Exciton states and optical transitions in InGaN/GaN quantum dot nanowire heterostructures: Strong built-in electric field and dielectric mismatch effects
000B32 (2010)		Hydrogenic impurity states in zinc-blende symmetric InGaN/GaN multiple quantum dots
000B58 (2010)		External electric field effect on the hydrogenic donor impurity in zinc-blende InGaN/GaN cylindrical quantum well wire
000C06 (2010)		Donor impurity states in zinc-blende InGaN/GaN asymmetric coupled quantum dots: Hydrostatic pressure effect
000F45 (2009)		Calculation of Exciton Energy in InAs/InP Self-assembled Semiconductor Quantum Wires
001125 (2008)		Hydrostatic pressure effects on impurity states in InAs/GaAs quantum dot
001126 (2008)		Hydrogenic impurity states in zinc-blende InGaN quantum dot
001161 (2008)		Electronic structures and optical properties of wurtzite type LiBSe2 (B = Al, Ga, In) : A first-principles study
001218 (2008)		Built-in electric field effect on the hydrogenic donor impurity in wurtzite InGaN quantum dot
001277 (2007)		Temperature-dependent photoluminescence of undoped, N-doped and N-in codoped ZnO thin films
001601 (2006)		Influence of the built-in electric field on luminescent properties in self-formed single InxGa1-xN/GaN quantum dots
001634 (2006)		Exciton states of vertically stacked self-assembled InAs quantum disks in an axial magnetic field
001635 (2006)		Exciton in wurtzite GaN/AlxGa1-xN coupled quantum dots
001661 (2006)		Donor bound excitons in wurtzite InGaN quantum dots : Effects of built-in electric fields

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