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Serveur d'exploration sur l'Indium - Analysis (Chine)

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Binary compound < Binary compounds < Binary mixture  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 303.
[0-20] [0 - 20][0 - 50][20-40]
Ident.Authors (with country if any)Title
000008 (2014) Surface state and optical property of sulfur passivated InP
000117 (2013) Room-temperature pulsed laser deposition and dielectric properties of amorphous Bi3.95Er0.05Ti3O12 thin films on conductive substrates
000149 (2013) Photoluminescence properties of porous InP filled with ferroelectric polymers
000165 (2013) Obvious improvement of light extraction obtained by anodic aluminum oxide coverage on GaN surface
000187 (2013) Less contribution of nonradiative recombination in ZnO nails compared with rods
000209 (2013) Influence of GaAs(0 01 ) pregrowth surface morphology and reconstruction on the growth of InGaAs layers
000267 (2013) Electrochemical growth and characterization of CdTe nanorod arrays
000378 (2012) Temperature dependent lasing characteristics of InAs/InP(100) quantum dot laser
000539 (2012) Experimental comparison of characteristics of magnetic-field-enhanced InAs and InSb Dember terahertz emitters pumped at 1550 nm wavelength
000659 (2011) Top Transmission Grating GaN LED Simulations for Light Extraction Improvement
000670 (2011) The photocurrent modulation of quantum dot resonant tunneling diode with forward bias voltage
000720 (2011) Self-assembled InAs/GaAs quantum dot molecules with InxGa1- xAs strain-reducing layer
000726 (2011) Red electroluminescence of diamond thin films
000764 (2011) Optical spectroscopy of lanthanides doped in wide band-gap semiconductor nanocrystals
000768 (2011) Optical bistability in GaInAsP/InP coupled-circular resonator microlasers
000812 (2011) InP-based deep-ridge NPN transistor laser
000827 (2011) Hot-electron induced degradations in GaN-based LEDs fabricated on nanoscale epitaxial lateral overgrown layers
000830 (2011) High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD
000831 (2011) High-power 1.25 μm InAs QD VECSEL based on resonant periodic gain structure
000931 (2011) Controlled synthesis of Cadmium-Free CuInS2/ZnS Quantum Dots
000935 (2011) Comparison between two types of photonic-crystal cavities for single-photon emitters

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