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Serveur d'exploration sur l'Indium - Analysis (Chine)

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Arsenic compound < Arsenic compounds < Arsenides  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 12.
Ident.Authors (with country if any)Title
001913 (2004-03) Electrical Properties of Melt-Epitaxy-Grown InAs0.04Sb0.96 Layers with Cutoff Wavelength of 12 μm
001A57 (2003-12-05) Interband Impact Ionization and Nonlinear Absorption of Terahertz Radiation in Semiconductor Heterostructures
001D02 (2002-02-04) Nitrogen-induced enhancement of the electron effective mass in InNxAs1-x
001E67 (2001-02-15) Surface Passivation Using P2S5/(NH4)2Sx and Hydrogen Fluoride Solutions on Ag/n-InAs and Ag/n-InSb Schottky Diodes
001E75 (2001-01-15) An Improved In0.34Al0.66As0.85Sb0.15/InP Heterostructure Utilizing Coupled δ-Doping InP Channel
001F95 (2000-10-15) Mechanism for photoluminescence in an InyAs1-yN/InxGa1-xAs single quantum well
002001 (2000-09-15) Influence of InxGa1-xAs (0≤x≤0.3) Cap Layer on Structural and Optical Properties of Self-assembled InAs/GaAs Quantum Dots
002019 (2000-05-15) Ga0.5In0.5P Barrier Layer for Wet Oxidation of AlAs
002196 (1999-03) Growth and characterization of high-quality InAs0.86Sb0.05P0.09 alloy by liquid-phase epitaxy
002295 (1998-11-15) Raman scattering of InAs1-x-ySbxPy quaternary alloys
002301 (1998-10) Thermal properties of InAs0.86Sb0.05P0.09 homostructure diodes
002457 (1997-05-15) Effect of well thickness on the two-dimensional electron-hole system in AlxGa1-xSb/InAs quantum wells

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