Aluminium nitride < Aluminium nitrides < Aluminium oxide

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 35.
[0-20] [0 - 20][0 - 35][20-34][20-40]

Ident.	Authors (with country if any)	Title
001266 (2007)		The growth of high-Al-content InAlGaN quaternary alloys by RF-MBE
001302 (2007)		Structural and electrical properties of p-type ZnO films prepared by Ultrasonic Spray Pyrolysis
001365 (2007)		Length dependence of polarization in spontaneous edge emissions from InGaN/AlGaN MQWs laser diodes
001464 (2007)		Controlled growth of nanostructured III-nitride films via a reactive magnetron sputtering method
001476 (2007)		Cathodoluminescence study of InGaN/GaN quantum-well LED structures grown on a Si substrate
001501 (2006)		Two-dimensional electron gas densities in AlGaN/AlN/GaN heterostructures
001513 (2006)		Theoretical study of improved two-dimensional electron gas density in AlGaN/GaN/AlGaN double heterostructure
001547 (2006)		Structural and optical properties of violet InGaN/AlInGaN light-emitting diodes grown by MOCVD
001555 (2006)		Separated AlxIn1-xN quantum dots grown by plasma-reactive co-sputtering
001568 (2006)		Polar oscillation and dispersion properties of quasi-confined optical phonon modes in a wurtzite GaN/AlxGa1-xN nanowire
001635 (2006)		Exciton in wurtzite GaN/AlxGa1-xN coupled quantum dots
001674 (2006)		Crack control in GaN grown on silicon (111) using in doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition
001709 (2005)		The effect of the AlxGa1-xN/AIN buffer layer on the properties of GaN/Si(111) film grown by NH3-MBE
001749 (2005)		Quantum and transport scattering times in modulation-doped AlxGa1-xN/GaN single quantum wells
001767 (2005)		Origin of the blueshift in the infrared absorbance of intersubband transitions in AlxGa1-x N/GaN multiple quantum wells
001951 (2004)		Structural and optical properties of quaternary AlInGaN epilayers grown by MOCVD with various TMGa flows
001965 (2004)		Propagating optical-phonon modes and their electron-phonon interactions in wurtzite GaN/AlxGa1-xN quantum wells
001996 (2004)		Indium mole fraction effect on the structural and optical properties of quaternary AlInGaN epilayers
001A29 (2004)		Dislocation scattering in a two-dimensional electron gas of an AlxGa1-xN/GaN heterostructure
001A34 (2004)		Crack-free InAlGaN quaternary alloy films grown on Si(1 1 1) substrate by metalorganic chemical vapor deposition
001B23 (2003)		Void formation and failure in InGaN/AlGaN double heterostructures

---

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Chine/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/KwdEn.i -k "Aluminium nitrides" 

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/KwdEn.i  \
                -Sk "Aluminium nitrides" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Chine/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Chine
   |étape=   Analysis
   |type=    indexItem
   |index=    KwdEn.i
   |clé=    Aluminium nitrides
}}

---

This area was generated with Dilib version V0.5.77. Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024