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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Keywords » - entrée « Aluminium compounds »
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Aluminium compound < Aluminium compounds < Aluminium fluorides  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 106.
[0-20] [0 - 20][0 - 50][20-40]
Ident.Authors (with country if any)Title
000F21 (2009) Diarylmethylene-bridged 4,4'-(bis(9-carbazolyl))biphenyl: morphological stable host material for highly efficient electrophosphorescence
001203 (2008) Cyclic arylamines as hole transport materials with high thermal stability for efficient electroluminescence
001769 (2005) Organic electroluminescent derivatives containing dibenzothiophene and diarylamine segments
001833 (2005) Effect of electric fields on photoluminescence of 4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran
001872 (2004-06-28) Investigations on V-defects in quaternary AlInGaN epilayers
001889 (2004-05) Study of AlGaInP multiquantum-well/double heterostructure light-emitting diodes with In-added GaP window layer regrown by antimony-based liquid phase epitaxy
001890 (2004-05) InGaN/AlGaN near-ultraviolet multiple quantum well light-emitting diodes with p-InGaN tunneling contact layer
001893 (2004-05) Characterization of Large-Area AlGaInP/Mirror/Si Light-Emitting Diodes Fabricated by Wafer Bonding
001894 (2004-04-19) Deep-ultraviolet emission from an InGaAs semiconductor laser
001906 (2004-03-15) High-power AlGaInP light-emitting diodes with metal substrates fabricated by wafer bonding
001907 (2004-03-15) Dynamical conductance through InAs/GaSb/InAs and InAs/AlSb/GaSb/AlSb/InAs structures
001910 (2004-03-01) Mechanism of enhanced luminescence in InxAlyGa1-x-yN quaternary epilayers
001915 (2004-02-23) Comment on Piezoelectric effect on Al0.35-δInδGa0.65N/GaN heterostructures [Appl. Phys. Lett. 80, 2684 (2002)]
001916 (2004-02-16) Electroreflectance study on the polarization field in InGaN/AlInGaN multiple quantum wells
001A57 (2003-12-05) Interband Impact Ionization and Nonlinear Absorption of Terahertz Radiation in Semiconductor Heterostructures
001A64 (2003-10-27) Response to Comment on AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy [Appl. Phys. Lett. 83, 3626 (2003)]
001A67 (2003-10-15) Ordering effects on optical transitions in GaxIn1-xP/(Al0.66Ga0.34)yIn1-yP quantum wells studied by photoluminescence and reflectivity spectroscopy
001A69 (2003-10-01) Improving the Performance of AlGaInP Laser Diode by Oxide Annealing
001A87 (2003-07-01) AlGaInP Light Emitting Diode with a Modulation-Doped Superlattice
001A88 (2003-06-23) Thermal property of tunnel-regenerated multiactive-region light-emitting diodes
001A91 (2003-06-15) Very Low Threshold Current Operation of 1.3-μm AlGaInAs/AlGaInAs Strain-Compensated Multiple-Quantum-Well Laser Diodes

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