Serveur d'exploration sur l'Indium - Analysis (Chine)

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Aluminium Antimonides < Aluminium Arsenides < Aluminium Arsenides phosphides  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 11.
Ident.Authors (with country if any)Title
000E40 (2009) Highly efficient four-wave mixing via intersubband transitions in InGaAs/AlAs coupled double quantum well structures
001245 (2008) 40 Gb/s InGaAlAs EML Module Based on Identical Epitaxial Layer Integration Scheme
002373 (1998) Optical disk mode pattern of InGaP microdisks emitting at 0.65 μm
002392 (1998) In0.2Ga0.8As/GaAs quantum well laser with C doped cladding and ohmic contact layers
002399 (1998) High power 980 nm InGaAs/GaAs/AlGaAs window structure lasers fabricated by impurity-free vacancy diffusion
002407 (1998) Growth and characterization of InGaAs/InAlAs/InP high-electron-mobility transistor structures towards high channel conductivity
002418 (1998) Coupled AlxGa1-xAs-AlAs distributed Bragg reflectors for high brightness AlGaInP light emitting diodes
002421 (1998) Carbon doped 980nm InGaAs strained quantum well lasers grown by metalorganic chemical-vapor deposition
002776 (1994) optical and transport properties of δ-doped pseudomorphic AlGaAs/InGaAs/GaAs structures
002788 (1994) Piezoelectric field effect transistor (PEFET) using In0.2Ga0.8As/Al0.35Ga0.65As/In0.2Ga0.8As/GaAs strained layer structure on (111)B GaAs substrate
002805 (1994) An improved approach and experimental results of a low-frequency noise measurement technique used for reliability estimation of diode lasers

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