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Serveur d'exploration sur l'Indium - Analysis (Chine)

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7,7,8,8-Tetracyanoquinodimethane < AES < APW calculation  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 15.
Ident.Authors (with country if any)Title
000901 (2011) Effects of Cu/In ratio of electrodeposited precursor on post-sulfurization process in fabricating quaternary CuIn(S,Se)2 thin films
000A59 (2010) Pulsed electrodeposition of oxygen-free tin monosulfide thin films using lactic acid/sodium lactate buffered electrolytes
000F81 (2008) Wetting behavior and interfacial characteristics of In-Sn alloy on CuZr-based bulk metallic glass
001724 (2005) Surface structure and electronic states of sulfur-treated InP(111)A studied by LEED, AES, STM, and IPES
001823 (2005) Electron energy loss spectroscopy, low energy electron diffraction, and auger electron spectroscopy study of indium overlayers on Si(111) and Si(100) surfaces
002360 (1998) Rapid thermal annealing characteristics of Be implanted into InSb
002423 (1998) Auger electron spectroscopy of neutralized (NH4)2S-passivated InP(100) surfaces
002485 (1997) Surface reconstruction and faceting of group III/IV (113) systems-common characteristics of the stable surface structures
002580 (1996-01-15) Chemisorption of group-III metals on the (111) surface of group-IV semiconductors: In/Ge(111)
002598 (1996) Photoluminescence enhancement of (NH4)2Sx passivated InP surface by rapid thermal annealing
002626 (1996) A new structure of in-based ohmic contacts to n-type GaAs
002630 (1995-11-15) PtGe ohmic contact to n-type InP
002691 (1995) {310} faceting of the Ge(001)2 × 1 surface induced by indium
002740 (1994-10-15) Study of indium antimonide metal-oxide-semiconductor structure prepared by direct photochemical-vapor deposition
002822 (1993) Quantitative analysis of InxGa1-xAs by Auger electron spectroscopy

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