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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « ZHONGYING XU »
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ZHONGYIN LIU < ZHONGYING XU < ZHONGYONG YUAN  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 5.
Ident.Authors (with country if any)Title
001B46 (2003) Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0 0 0 1) sapphire substrate
001F50 (2001) Experimental investigation of photoluminescence dynamics of cavity polaritons under nonresonant excitation
001F61 (2001) Detection of efficient carrier capture in ultrathin InAs/GaAs layers using a degenerate pump-probe technique
002121 (2000) Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes
002851 (1992) Temperature modulated photoluminescence in semiconductor quantum wells

List of associated KwdEn.i

Nombre de
documents		Descripteur
5Experimental study
4Photoluminescence
3Binary compounds
3Gallium arsenides
3Indium arsenides
3Semiconductor materials
2Heterostructures
2Low temperature
2Quantum wells
2Ternary compounds
1Aluminium Gallium Arsenides Mixed
1Aluminium nitrides
1Buffer layer
1Cavities
1Characterization
1Charge carrier trapping
1Crystal growth from vapors
1Crystal perfection
1Dispersion relations
1Electron emission
1Exciton
1Fine structure
1Gallium Arsenides
1Gallium Indium Arsenides Mixed
1Gallium nitrides
1Heterojunctions
1III-V semiconductors
1Indium nitrides
1Inorganic compound
1Interdiffusion
1Kramers Kronig analysis
1Laser diodes
1Localized exciton
1Low pressure
1MOVPE method
1Modulation
1Molecular beam epitaxy
1Nanostructures
1Picosecond
1Polaritons
1Pump probe spectrometry
1Quantum dots
1Quantum well
1Radiative recombination
1Rapid thermal annealing
1Rate equation
1Refractive index
1Semiconductor lasers
1Spontaneous emission
1Temperature
1Thin films
1Time dependence
1Time resolved spectroscopy
1VPE

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