IndiumV3, Chine, Analysis, indexItem, Author.i, ZHE CHUAN FENG

ZHE CHEN < ZHE CHUAN FENG < ZHE JIN

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 8.

Ident.	Authors (with country if any)	Title
000161 (2013)		Optical and structural studies of dual wavelength InGaN/GaN tunnel-injection light emitting diodes grown by metalorganic chemical vapor deposition
000543 (2012)		Enhancement of light-emission efficiency of ultraviolet InGaN/GaN multiple quantum well light emitting diode with InGaN underlying layer
000683 (2011)		Tetragonal distortion of InAsPSb film grown on InAs substrate studied by Rutherford backscattering/channeling and synchrotron X-ray diffraction
000718 (2011)		Shallow-Deep InGaN Multiple-Quantum-Well System for Dual-Wavelength Emission Grown on Semipolar (1122) Facet GaN
000729 (2011)		Raman scattering and Rutherford backscattering studies on InN films grown by plasma-assisted molecular beam epitaxy
000B38 (2010)		High Brightness GaN Light Emitting Diodes with Different Barrier Widths in Quantum Wells for General Lighting Application
001159 (2008)		Emission dynamics of InAs self-assembled quantum dots with different cap layer structures
001507 (2006)		Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots

List of associated KwdEn.i

Nombre de documents	Descripteur
7	Photoluminescence
4	Gallium nitride
4	III-V semiconductors
4	Indium nitride
4	Multiple quantum well
3	Growth mechanism
3	III-V compound
3	Light emitting diode
3	Time resolved spectra
3	XRD
2	Crystal structure
2	Indium arsenides
2	MOCVD
2	Microelectronic fabrication
2	Molecular beam epitaxy
2	Nanostructured materials
2	Non radiative recombination
2	Optical properties
2	Quantum confined Stark effect
2	Quantum dots
2	Quantum well
2	RBS
2	Radiative lifetimes
2	Radiative recombination
2	Stokes shift
2	Temperature dependence
2	Thin films
2	Time resolution
2	Transmission electron microscopy
1	Aluminium oxide
1	Atomic force microscopy
1	Barrier layer
1	Binary compound
1	Binary compounds
1	Brightness
1	Carrier density
1	Carrier lifetime
1	Channeling
1	Coatings
1	Confinement
1	Crystal growth from vapors
1	Crystal perfection
1	Density
1	Dislocation structure
1	Dynamic properties
1	Elastic deformation
1	Electroluminescence
1	Energy gap
1	Epitaxial layers
1	Experimental study
1	Faceting
1	Fluctuations
1	Gallium Indium Nitrides Mixed
1	Gallium arsenides
1	Growth rate
1	High resolution
1	Indium Antimonides arsenides phosphides
1	Integrated intensity
1	Interdiffusion
1	Lattice distortion
1	Lifetime
1	Light emission
1	Light emitting diodes
1	Luminescence
1	Luminescence decay
1	MOVPE method
1	Optical characteristic
1	Optimization
1	Optoelectronic devices
1	Performance evaluation
1	Plasma assisted processing
1	Quantum system
1	Raman scattering
1	Resonance
1	Room temperature
1	Scanning electron microscopy
1	Scanning transmission electron microscopy
1	Segregation
1	Self-assembled layers
1	Self-assembly
1	Size effect
1	Strained layer
1	Surface effect
1	Symmetry property
1	Synchrotron radiation
1	Ternary compound
1	Thermal stability
1	Thickness
1	Time dependence
1	Time measurement
1	Tunnel effect
1	Visible radiation
1	Wave functions
1	Wurtzite structure
1	X ray diffraction

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   |index=    Author.i
   |clé=    ZHE CHUAN FENG
}}

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List of bibliographic references

List of associated KwdEn.i

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