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Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « Z. Xu »
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Z. Xinfa < Z. Xu < Z. Xuping  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 11.
Ident.Authors (with country if any)Title
000520 (2012) Growth and characterization of InGaN nanodots hybrid with InGaN/GaN quantum wells
000B14 (2010) Inverted small molecule organic solar cells with Ca modified ITO as cathode and MoO3 modified Ag as anode
001678 (2006) Charge carriers bulk recombination instead of electroplex emission after their tunneling through hole-blocking layer in OLEDs
001787 (2005) Investigation into the effect of LiF at the organic interface on electroluminescence
001833 (2005) Effect of electric fields on photoluminescence of 4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran
002399 (1998) High power 980 nm InGaAs/GaAs/AlGaAs window structure lasers fabricated by impurity-free vacancy diffusion
002405 (1998) Growth and fabrication of high performance 980nm strained InGaAs quantum well lasers using novel hybrid material system of InGaAsP and AlGaAs
002421 (1998) Carbon doped 980nm InGaAs strained quantum well lasers grown by metalorganic chemical-vapor deposition
002483 (1997) The chemical status of indium in indium impregnated HZSM-5 catalysts for the SCR of NO with CH4
002493 (1997) Solid-liquid equilibria for III-V quinary alloy semiconductors
002591 (1996) Selective catalytic reduction of nitrogen monoxide with methane over impregnated In/HZSM-5 in the presence of excess oxygen

List of associated KwdEn.i

Nombre de
documents		Descripteur
3Binary compounds
3Gallium Arsenides
3Indium Arsenides
3Photoluminescence
3Quinoline derivatives
3Semiconductor lasers
3Strained quantum well
3Ternary compounds
2Aluminium Arsenides
2Catalytic reaction
2Chemical reduction
2Doping
2Electroluminescence
2Experimental study
2Indium oxide
2Interfacial layer
2MOVPE method
2Methane
2Semiconductor materials
2Thickness
2Zeolite
1Aluminium Alloys
1Aluminium compound
1Aluminium compounds
1Anode
1Arsenic Alloys
1Balance
1Bilayers
1Buffer layer
1CVD
1Carbazole derivative polymer
1Carbon
1Cathode
1Charge carrier recombination
1Charge transport
1Copper complex
1Electric field effect
1Electron injection
1Exciton
1Fill factor
1Fullerenes
1Gallium Alloys
1Gallium Phosphides
1Gallium nitride
1Heterogeneous catalysis
1High field
1High power
1Hydrocarbon
1ITO layers
1IV characteristic
1Illumination
1Impregnation
1Indium Alloys
1Indium Compounds
1Indium Phosphides
1Indium nitride
1Inorganic compounds
1Interfaces
1Light absorption
1Light emitting diode
1Light emitting diodes
1Line widths
1Liquid solid equilibrium
1Lithium fluorides
1Metallophthalocyanine
1Molecular sieve
1Molybdenum
1Molybdenum oxide
1Multi-element alloys
1Multiple layer
1Nanodot
1Nitric oxide
1Nitrogen monoxide
1Ohmic contact
1Open circuit voltage
1Organic photovoltaics
1Organic solar cells
1Performance
1Performance characteristic
1Performance evaluation
1Phase equilibrium
1Phase separation
1Phenylene derivative polymer
1Phosphorus Alloys
1Pyrans
1Quantum wells
1Quaternary compounds
1Quenching
1Quinary system
1Recombination process
1Selectivity
1Short circuit currents
1Small molecule
1Spectral line shift
1Supported catalyst
1Theoretical study
1Thermodesorption
1Thermodynamic properties
1Thin film
1Tin addition

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