Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « Z. Wang »
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Z. W. Zhu < Z. Wang < Z. Wen  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 7.
Ident.Authors (with country if any)Title
001804 (2005) Hydrogen indium vacancy complex VInH4 in n-type InP studied by positron-lifetime
001E42 (2001-07-15) Random telegraph noise in the photoluminescence of individual GaxIn1-xAs quantum dots in GaAs
002265 (1999) Indium composition dependence of size uniformity of InGaAs quantum dots on (311)B GaAs grown by means of molecular beam epitaxy
002391 (1998) InAs quantum dots in InAlAs matrix on (0 0 1)InP substrates grown by molecular beam epitaxy
002570 (1996-05-01) Photoluminescence of GaInP under high pressure
002572 (1996-03-18) Ordering along <111> and <100> directions in GaInP demonstrated by photoluminescence under hydrostatic pressure
002622 (1996) Characterization of deep centers in AlGaAs/InGaAs/GaAs pseudomorphic HEMT structures grown the molecular beam epitaxy and hydrogen treatment

List of associated KwdEn.i

Nombre de
documents
Descripteur
5Experimental study
3Photoluminescence
3Semiconductor materials
2Aluminium arsenides
2Binary compounds
2Gallium arsenides
2Indium arsenides
2Molecular beam epitaxy
2Ternary compounds
1Application
1Coherent three dimensional islands
1Complex defect
1Crystal growth from melts
1Crystal growth from vapors
1Czochralski method
1DLTS
1Deep energy levels
1Defect states
1Donor center
1Epitaxial layers
1Experiments
1Fabricating uniform dense quantum dots
1Growth mechanism
1High electron mobility transistor
1III-V semiconductors
1Illumination
1Indium composition
1Indium compounds
1Indium phosphides
1Inorganic compounds
1Ionization potential
1Island structure
1Liquid encapsulation
1Optical noise
1Positron annihilation
1Quantum dots
1Random noise
1SIMS
1Semiconducting gallium arsenide
1Semiconductor quantum dots
1Stoichiometry
1TEM
1Traps
1Valence
1XRD

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