Auteurs
Analysis
Chine
Racine
Analysis
Chine
Repository
Accueil
Racine
Racine

Serveur d'exploration sur l'Indium - Analysis (Chine)

Index « Auteurs » - entrée « Z. L. Xie »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
Z. L. Wu < Z. L. Xie < Z. L. Xu  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 9.
Ident.Authors (with country if any)Title
000165 (2013) Obvious improvement of light extraction obtained by anodic aluminum oxide coverage on GaN surface
000520 (2012) Growth and characterization of InGaN nanodots hybrid with InGaN/GaN quantum wells
000864 (2011) Exploring optimal UV emission windows for AlGaN and AlInN alloys grown on different templates
000B75 (2010) Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films
000D91 (2009) Observation of the surface circular photogalvanic effect in InN films
001211 (2008) Circular photogalvanic effect at inter-band excitation in InN
001265 (2007) The high mobility InN film grown by MOCVD with GaN buffer layer
001370 (2007) Initial stages of the cubic-InN growth with the technique of the pre-deposition of indium
001703 (2005) Thermal annealing of InN films grown by metal-organic chemical vapor deposition

List of associated KwdEn.i

Nombre de
documents		Descripteur
5Indium nitride
5Photoluminescence
4Inorganic compounds
3III-V semiconductors
3Indium nitrides
3Interband transitions
3MOCVD
3Semiconductor materials
2Atomic force microscopy
2Carrier density
2Electronic properties
2Energy gap
2Gallium nitride
2III-V compound
2Scanning electron microscopy
2Thin films
2XRD
1Absorption edge
1Absorption spectra
1Accumulation layers
1Aluminium
1Aluminium Gallium Nitrides Mixed
1Aluminium Indium Nitrides Mixed
1Ambient temperature
1Ammonia
1Annealing
1Anodic oxide
1Anodizing
1Band structure
1Binary compounds
1Buffer layer
1CVD
1Chemical composition
1Coverage rate
1Crystal growth from vapors
1Crystal nucleation
1Crystal structure
1Cubic lattices
1Electrical characteristic
1Electrical properties
1Electron charge distribution
1Electron interaction
1Electronic structure
1Excitons
1Experimental study
1Films
1Fluctuations
1Gallium Nitrides
1Gallium nitrides
1Hall mobility
1Helicity
1Incidence angle
1Indium Nitrides
1Indium compounds
1Infrared spectra
1Integrated intensity
1Lamellar structure
1Laser radiation
1Line widths
1Localized exciton
1Low pressure
1Metallic thin films
1Metals
1Microscopic model
1Mirrors
1Molecular beam epitaxy
1Multiple quantum well
1Nanodot
1Nanostructures
1Nitrides
1Operating conditions
1Optical absorption
1Perturbation theory
1Phase separation
1Phenomenological model
1Photoconductivity
1Photovoltaic effects
1Porosity
1Pseudomorphic growth
1Quantum wells
1Radiation effects
1Sapphire
1Scanning electron microscopes
1Spectral line shift
1Spin manipulation
1Spin polarized transport
1Spintronics
1Surface conductivity
1Temperature
1Temperature dependence
1Template method
1Ternary compounds
1Thermal annealing
1Ultraviolet radiation
1Uniaxial strain
1VPE
1Wafers
1X-ray microscopy
1X-ray spectra

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Chine/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i -k "Z. L. Xie" 

HfdIndexSelect -h $EXPLOR_AREA/Data/Chine/Analysis/Author.i  \
                -Sk "Z. L. Xie" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Chine/Analysis/biblio.hfd

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Chine
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    Z. L. Xie
}}
Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024